The future electronics will be soft, flexible and even stretchable to be more human friendly in the form of wearable computers. However, conventional electronic materials are usually brittle. Recently, carbon based materials are intensively investigated as a good candidate for flexible electronics but with limited mechanical and electrical performances. Metal is still the best material for electronics with great electrical properties but with poor transparency and mechanical performance. Here we present a simple approach to develop a synthesis method for very long metallic nanowires and apply them as new types of high performance flexible and transparent metal conductors as an alternative to carbon nanotubes, graphene and short nanowire based flexible transparent conductors and indium tin oxide based brittle transparent conductors. We found that very long metallic nanowire network conductors combined with a low temperature laser nano-welding process enabled superior transparent flexible conductors with high transmittance and high electrical conductivity. Further, we demonstrated highly flexible metal conductor LED circuits and transparent touch panels. The highly flexible and transparent metal conductors can be mounted on any non-planar surfaces and applied for various opto-electronics and ultimately for future wearable electronics.

This article presents novel, rapid, and environmentally benign synthesis method for one-step reduction and decoration of graphene oxide with gold nanoparticles (NAuNPs) by using thermostable antimicrobial nisin peptides to form a gold-nanoparticles-reduced graphene oxide (NAu-rGO) nanocomposite. The formed composite material was characterized by UV/Vis spectroscopy, X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, field emission scanning electron microscopy, and high-resolution transmission electron microscopy (HR-TEM). HR-TEM analysis revealed the formation of spherical AuNPs of 5–30 nm in size on reduced graphene oxide (rGO) nanosheets. A non-volatile-memory device was prepared based on a solution-processed ZnO thin-film transistor fabricated by inserting the NAu-rGO nanocomposite in the gate dielectric stack as a charge trapping medium. The transfer characteristic of the ZnO thin-film transistor memory device showed large clockwise hysteresis behaviour because of charge carrier trapping in the NAu-rGO nanocomposite. Under positive and negative bias conditions, clear positive and negative threshold voltage shifts occurred, which were attributed to charge carrier trapping and de-trapping in the ZnO/NAu-rGO/SiO₂ structure. Also, the photothermal effect of the NAu-rGO nanocomposites on MCF7 breast cancer cells caused inhibition of ~80% cells after irradiation with infrared light (0.5 W cm⁻²) for 5 min.