This paper inquires the phonon transport and temperature distribution in graphene nanoribbon field-effect transistor (GNRFET). We propose a modified Ballistic-diffusive equation model (BDE) to explore the phonon transport in GNRFET transistors. In addition, we have studied the effect of the channel length on thermal characteristics. Finite-element approximation used to study the temperature distribution in nano-GNRFET. The proposed model has been validated on the basis of available results from the literature. Our results shows that phonon transport predicted by the proposed BDE model is close to that obtained by Boltzmann transport equation. We found that the proposed model is able to estimate the thermal performance of GNRFET. The results prove also that the characteristic length of the GNR has no important role in the increasing of the temperature.

This paper investigates the heat transfer and temperature distribution as well as electric fields in a 10-nm MOSFET and insulator region silicon-on-insulator MOSFET (IR-SOI-MOSFET). An electrothermal model based on a dual-phase-lag model coupled with a second-order temperature-jump boundary condition and drift-diffusion (D-D) model has been elaborated. The D-D model is used to take into account that the heat source by Joule effect and the width of the channel depends on the electrical fields. The finite-element method has been employed to generate the numerical results. The model has been validated on the basis of available numerical results. It is found that once the Fourier law ceases to be valid, our model is able to predict the phonon transport and electrical properties in nanostructures. In a technological viewpoint, the IR-SOI-MOSFET is more thermally efficient compared with a classical SOI-MOSFET.

In this paper, thermal stability and phonon transport of 22-nm fully depleted silicon on insulator (FD-SOI) MOSFET is investigated. On the one hand, we have demonstrated that the single-phase-lag (SPL) model is able to predict the phonon transport in 22-nm FD-SOI MOSFET. On the other hand, we have investigated the role of the spacer between source, drain, (S/D) and gate of the MOS transistor for the increasing of the temperature. An electrothermal model based on nonlinear SPL equation coupled with an electric model has been investigated. To solve the proposed model, we have performed a numerical study based on the finite element method. The proposed model has been validated on the basis of available results. We found that the present model is able to predict the phonons and electrons transport in nano FD-SOI-MOSFET compared with the DPL model. In a technological viewpoint, we found that the distance between S/D and gate has an important role for the increasing of the temperature.