Implementation of tunable digital and analog resistive switching (RS) behaviors for memristors is crucial toward their development in data storage and energy-efficient computations. Herein, the CsPbBr3 film-based RS memristors with different switching film thickness and adaptable electrodes are constructed, which are implemented by the solution processed method. All the constructed memristors demonstrate stable bipolar switching behaviors, and in special, the gradual analog RS behavior with multi-level conductance is observed for the thin memristor, making it as the promising artificial synapse. As a comparison, the thick memristor demonstrates digital abrupt RS behavior, accompanying with a high memory window (>103), which can be applied in data storage field. Furthermore, the evolution of conductive filaments, stemming from synergetic bromine vacancies and aluminum atoms, is proposed to clarify the distinguished dynamic changes in the RS process. This work provides an optimization strategy to tune RS behavior for CsPbBr3-based RS memristors and paves the way for both data storage and artificial synapse applications.

Valence change memory (VCM) attracts numerous attention in memory applications, due to its high stability and low energy consumption. However, owing to the low on/off ratio of VCM, increasing the difficulty of information identification hinders the development of memory applications. We prepared N-doped NbO_x:N films (thickness = approximately 15 nm) by pulsed laser deposition at 200 °C. N-doping significantly improved the on/off ratio, retention time, and stability of the Pt/NbO_x:N/Pt devices, thus improving the stability of data storage. The Pt/NbO_x:N/Pt devices also achieved lower and centralized switching voltage distribution. The improved performance was mainly attributed to the formation of oxygen vacancy (V_O) + 2N clusters, which greatly reduced the ionic conductivity and total energy of the system, thus increasing the on/off ratio and stability. Moreover, because of the presence of Vo + 2N clusters, the conductive filaments grew in more localized directions, which led to a concentrated distribution of SET and RESET voltages. Thus, in situ N-doping is a novel and effective approach to optimize device performances for better information storage and logic circuit applications.

The volatile and nonvolatile resistance switching (RS) characteristics can be, respectively, used for the selector and memristor, which have received much attention. Thus, it is essential to find a simple and effective method to control the specific RS behavior of NbOx materials due to the co-occurrence of memory RS and threshold RS behaviors. Here, the NbOx film with a thickness of 100 nm was prepared by magnetron sputtering at 80 °C. The tungsten steel tip/NbOx/Pt device exhibited the co-existence of memory RS and threshold RS behaviors. By properly regulating compliance current (Icc), the specified memory and threshold RS behaviors were observed: the memory RS behavior occurred with an Icc of 5 mA, the threshold RS behavior occurred with an Icc of 10 mA, and integrated one selector-one-RRAM (resistive random access memory) (1S1R) RS behavior occurred with an Icc of 50 mA. Moreover, individual RS behavior showed good performance, e.g., good stability of memory RS, good repeatability and concentrated voltage distribution of threshold RS. The memory RS behavior occurred mainly due to the formation and fracture of oxygen vacancy conductive filaments (CFs). Meanwhile, mediated by local Joule heating, thermally induced conductivity change was responsible for the threshold RS behavior. Under an Icc of 50 mA, the oxygen vacancy CFs and a thermally induced conductivity change triggered the 1S1R RS behavior, which significantly suppressed the leakage current in RRAM 3D integrated structures. This work provides an efficient and convenient method for modulating and obtaining the desired RS behavior and better understanding the conversion mechanism between them.