Vertically well-aligned ZnO nanowire ultraviolet (UV) photodetectors were fabricated by spin-on-glass technology on ZnO:Ga/glass templates. With $2\mathrm{V}$ applied bias, it was found that dark current density of the fabricated device was only $2.0\times {10}^{-7}\mathrm{A}∕{\mathrm{cm}}^2$ . It was also found that UV-to-visible rejection ratio and quantum efficiency of the fabricated ZnO nanowire photodetectors were more than 1000 and 12.6%, respectively.

Two-dimensional (2D) ZnO nanowalls were prepared on a glass substrate by a low-temperature thermal evaporation method, in which the fabrication process did not use a metal catalyst or the pre-deposition of a ZnO seed layer on the substrate. The nanowalls were characterized for their surface morphology, and the structural and optical properties were investigated using scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), and photoluminescence (PL). The fabricated ZnO nanowalls have many advantages, such as low growth temperature and good crystal quality, while being fast, low cost, and easy to fabricate. Methane sensor measurements of the ZnO nanowalls show a high sensitivity to methane gas, and rapid response and recovery times. These unique characteristics are attributed to the high surface-to-volume ratio of the ZnO nanowalls. Thus, the ZnO nanowall methane sensor is a potential gas sensor candidate owing to its good performance.

The authors propose a simple, low cost, and mass producible imprint lithography method to texture indium tin oxide (ITO) contact layer of nitride-based light emitting diodes (LEDs). Under $20\mathrm{mA}$ current injection, it was found that forward voltages were 3.24, 3.25, and $3.24\mathrm{V}$ while the LED output powers were 11.7, 12.6, and $13.3\mathrm{mW}$ for the conventional ITO LED, ITO LED patterned with $1.75\mu \mathrm{m}$ holes, and ITO LED patterned with $0.85\mu \mathrm{m}$ holes, respectively.

Vertically well aligned P-doped ZnO nanowires were prepared on ZnO–Ga/glass templates at 550 °C by reactive evaporation without metal catalysts and the nanowires were found to be single crystalline with the würtzite structure, oriented in the c-axis direction; the P-doping shortened the physical lengths of the ZnO nanowires without changing their diameter, and furthermore, the introduction of P atoms resulted in a much weaker and broader ZnO band edge emission.