In the present study, we provide useful data related to one of the most promising materials in thin-film solar cell technologies: Cu₂ZnSnS₄ (CZTS) kesterite structures. Sol-gel spin coating and chemical bath deposition methods were used to fabricate and further investigate Mo/CZTS/CdS/ZnO/AZO heterostructures. In order to examine the crystal structure of the samples, Raman scattering measurements using two excitation wavelengths (514.5 nm and 785 nm) were performed. Three Raman bands related to CZTS were found, as well as one that had its origin in CdS. By using laser ablation and performing Raman spectroscopy on these modified samples, it was shown that during the manufacturing process a MoS₂ interlayer was formed between the CZTS and Mo layers. Our method proved that the CZTS layer in a multilayer device structure fabricated by solution-based methods can be decomposed, and thus a detailed analysis of the layer can be performed. Subsequently, current-voltage curves were investigated in terms of the essential electrical properties of glass/Mo/p-CZTS/n-CdS/ZnO/AZO junctions and occurring current transport mechanisms. Finally, AFM data were acquired to study the surface topography of the studied samples. The images showed that these surfaces had a uniform grain structure.

Commercial silicon solar cells coated with a CsPbBr ₃ :10%Yb ³⁺ ,10%Rb ⁺ layer exhibited increased near-infrared photoresponse.

Photodetectors (PDs) are essential in imaging, communication, and sensing technologies. However, their reliance on external power makes them energy-consuming. This creates a strong need for self-powered PDs as a sustainable alternative. Zinc oxide (ZnO) is a promising semiconductor material due to its pyroelectric properties, stemming from noncentrosymmetric wurtzite crystal structure, enabling the pyro-phototronic effect that enhances response speed. Properties of ZnO can be tailored via alloying and doping. Thus, this work explores thin layers of ZnCdO:Eu random alloys grown by molecular beam epitaxy on silicon substrates with varying Cd content. The study shows that doping with Eu notably affects growth kinetics, promoting a strong [0001] orientation preference. Moreover, photoluminescence measurements confirm the successful incorporation of Eu³⁺ ions into the structure. Electrical measurements show that the introduction of Cd eliminates the problem of Schottky barrier formation at the ZnO/Au interface. The n-ZnCdO:Eu/p-Si junctions exhibit rectifying behavior and generate photocurrent across the 370-1150 nm wavelength range without external electrical bias. Utilizing the pyro-phototronic effect, these devices achieved ultrafast response times: rise time below 10 μs and decay time below 5 μs for 405 and 650 nm illumination, placing them among the fastest self-powered oxide-based detectors that do not rely on additional performance-enhancing layers.

This investigation reports on the fabrication and characterization of heterojunctions formed by in situ europium-doped cadmium oxide (CdO:Eu) layers deposited on p -type silicon substrates using the plasma-assisted molecular beam epitaxy method. The structural properties of polycrystalline CdO films are examined using x-ray diffraction and Fourier transform infrared spectroscopy is used to analyze molecular vibrations. The electrical properties of the resulting n -CdO:Eu/ p -Si heterojunctions are evaluated using temperature-dependent current–voltage (I–V) and electron beam–induced current (EBIC) measurements. The I–V characteristics revealed diode-like behavior with a rectification factor of ∼12–52 at ±2 V at 300 K, indicating good junction quality. In an EBIC measurement, an electron beam is used to generate electron–hole pairs. These electron–hole pairs may generate a current if a charge-carrier selective device structure is used. EBIC measurements enabled the estimation of minority carrier diffusion lengths and allowed for a clear identification of the depletion region at the CdO/Si interface.