MA-free inverted PSCs with NDAPBF₄ion liquid.

With the continuous development and progress of science and technology, the third-generation semiconductor power devices (SPDs) represented by SiC MOSFETs have become key devices in the field of power electronics due to their merits of excellent power density, high-temperature operating capability, high-frequency characteristics, and high-energy efficiency. However, when these devices are used in radiation environments like aviation and aerospace, significant challenges are posed to their reliability and performance. This article reviews the research on the core issues of radiation damage of SiC MOSFET power devices. It presents the research progress on the degradation mechanism, radiation damage mechanism, and radiation hardening technology of SiC MOSFET power devices under irradiation conditions of different types such as $\gamma$ -rays, electrons, protons, neutrons, and heavy ions. Hopefully, this review can provide an in-depth understanding of the reliability and stability of SiC MOSFET power devices in some special applications.

Here, we demonstrate a high-performance and stable polarization-sensitive UV photodetector based on a dendritic crystal lead-free metal-halide CsCu₂I₃/GaN vertical heterostructure.

High-electron-mobility transistors (HEMTs) are a promising device in the field of radio frequency and wireless communication. However, to unlock the full potential of HEMTs, the fabrication of large-size flexible HEMTs is required. Herein, a large-sized (> 2 cm²) of AlGaN/AlN/GaN heterostructure-based HEMTs were successfully stripped from sapphire substrate to a flexible polyethylene terephthalate substrate by an electrochemical lift-off technique. The piezotronic effect was then induced to optimize the electron transport performance by modulating/tuning the physical properties of two-dimensional electron gas (2DEG) and phonons. The saturation current of the flexible HEMT is enhanced by 3.15% under the 0.547% tensile condition, and the thermal degradation of the HEMT was also obviously suppressed under compressive straining. The corresponding electrical performance changes and energy diagrams systematically illustrate the intrinsic mechanism. This work not only provides in-depth understanding of the piezotronic effect in tuning 2DEG and phonon properties in GaN HEMTs, but also demonstrates a low-cost method to optimize its electronic and thermal properties.