Advanced oxidation processes (AOPs) have emerged as a promising approach for the removal of organic dyes from effluents. Different AOPs were employed for the degradation of Reactive Yellow 160A (RY-160A) dye, i.e., SnO₂/UV/H₂O₂ and TiO₂/UV/H₂O₂. In the case of UV treatment, maximum degradation of 28% was observed, while UV/H₂O₂ furnished 77.78% degradation, and UV/H₂O₂/TiO₂ degraded the RY-160A dye up to 90.40% (RY-160A 30 mg/L, 0.8 mL of H₂O₂). The dye degradation was 82.66% in the case of UV/H₂O₂/SnO₂ at pH 3. FTIR and LC-MS analyses were performed in order to monitor the degradation by-products. The cytotoxicity and mutagenicity of RY-160A dye were evaluated by hemolytic and Ames (TA98 and TA100 strains) assays. It was observed that the RY-160A dye solution was toxic before treatment, and toxicity was reduced significantly after treatment. Results indicated that UV/H₂O₂/TiO₂ is more efficient at degrading RY-160A versus other AOPs, which have potential application for the remediation of dyes in textile effluents.

This study was on the optoelectronic properties of multilayered two-dimensional MoS₂ and WS₂ materials on a silicon substrate using sputtering physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. For the first time, we report ultraviolet (UV) photoresponses under air, CO₂, and O₂ environments at different flow rates. The electrical Hall effect measurement showed the existence of MoS₂ (n-type)/Si (p-type) and WS₂ (P-type)/Si (p-type) heterojunctions with a higher sheet carrier concentration of 5.50 × 10⁵ cm⁻² for WS₂ thin film. The IV electrical results revealed that WS₂ is more reactive than MoS₂ film under different gas stimuli. WS₂ film showed high stability under different bias voltages, even at zero bias voltage, due to the noticeably good carrier mobility of 29.8 × 10² cm²/V. WS₂ film indicated a fast rise/decay time of 0.23/0.21 s under air while a faster response of 0.190/0.10 s under a CO₂ environment was observed. Additionally, the external quantum efficiency of WS₂ revealed a remarkable enhancement in the CO₂ environment of 1.62 × 10⁸ compared to MoS₂ film with 6.74 × 10⁶. According to our findings, the presence of CO₂ on the surface of WS₂ improves such optoelectronic properties as photocurrent gain, photoresponsivity, external quantum efficiency, and detectivity. These results indicate potential applications of WS₂ as a photodetector under gas stimuli for future optoelectronic applications.