In this work, radiation experiments and simulations were carried out on perovskite solar cells (PSCs). The experimental results show that the PSCs in this work were robust to proton irradiation but more sensitive to electron irradiation, which is different from the results of previous studies. Simulations based on the Monte Carlo method show that the energy loss at the interface was much higher than that in the material bulk, and the interface was more sensitive to electron incidents.

The individual and mixed radiation experiments of gamma rays and neutrons were performed to evaluate the irradiation synergistic effects (ISEs) of ionizing dose and displacement damage on SiGe heterojunction bipolar transistors (HBTs). These results indicate that the SiGe HBTs in this work experience a significant sensitivity of ISEs and the degradation of base current induced by mixed irradiation was more severe than that of simple artificial sum of individual irradiation. The degradation of SiGe HBTs induced by mixed radiation does not vary with $V_{\mathrm {BE}}$ linearly, but is significant at low injection and weakened at high injection.

This article investigates the transient dose rate effect (TDRE) of two types of level-shifting transceivers. Experimental results show that both transceivers have a high latch-up threshold. One uncommon phenomenon is found that there are photocurrents generated at the input ports for both transceivers when exposed to transient $\gamma $ radiation. Moreover, the polarity and amplitude of the photocurrents are related to the input voltage level. A hypothesis is proposed that this uncommon phenomenon is caused by the electrostatic discharge (ESD) circuits at the input ports and then it is successfully verified by TCAD simulations. The simulation results show that the vertical parasitic p-n-p transistor in pMOS of the ESD circuit could turn on under transient $\gamma $ radiation, and generate a positive photocurrent when the input port is configured to high-level voltage. On the contrary, when the input port is configured to low-level voltage, its lateral parasitic p-n-p transistor in pMOS could turn on and generate a negative photocurrent. The amplitude of the positive photocurrent is obviously larger than the negative photocurrent due to different gains of the parasitic transistors. Simulation results also show the number of pMOSs in n-well has significant impacts on the amplitude of photocurrents.

Enhanced low dose rate sensitivity (ELDRS) in different process Silicon–Germanium heterojunction bipolar transistors (SiGe HBTs) is investigated. Low and high dose rate irradiations are performed to evaluate the ELDRS of SiGe HBTs manufactured by Tsinghua University (THU). THU SiGe HBTs experience significantly low dose rate sensitivity than that of IBM 8HP SiGe HBTs and behave a “true” dose rate effect. TCAD models were used to explicate the microcosmic structure in THU and IBM 8HP SiGe HBTs. Comparison and discussion show that different SiGe processes may involve different HBT structures and device designs which are the critical influence of ELDRS effect. The different responses of ELDRS should be first attributed to the device structure and design in nature, particularly the geometry of emitter–base junction and the isolation structure.

With the increasingly widespread application of CMOS image sensors (CIS) in radiation environments, such as aerospace, their radiation effects have gained attention. This paper investigates single-event transient (SET) caused by the proton direct ionization on CIS, combining both experimental and simulation methods. The proton beam energy used in the experiment is 12 MeV, with a flux up to 3.5 × 108 p/(cm2 s). Due to the periodicity of the proton beam, the CIS output displays a phenomenon of alternating brightness and darkness. When the proton beam flux is low, numerous SET bright spots with different outputs are observed. To comprehensively analyze these experimental phenomena, a typical three-dimensional 4T pinned photodiode model is constructed in TCAD, and relevant SET simulation is carried out. The results indicate that incident position, incident time, and the number of incident protons significantly affect the output of SET-generated bright spots, which are key factors contributing to the different bright spots observed in the experiment.

Different SiGe processes and device designs are the critical influences of ionizing radiation damage. Based on the different ionizing radiation damage in SiGe HBTs fabricated by Huajie and an IBM SiGe process, quantitatively numerical simulation of ionizing radiation damage was carried out to explicate the distribution of radiation-induced charges buildup in KT9041 and IBM SiGe HBTs. The sensitive areas of the EB-spacer and isolation oxide of KT9041 are much larger than those of the IBM SiGe HBT, and the distribution of charge buildup in KT9041 is several orders of magnitude greater than that of the IBM SiGe HBT. The result suggests that the simulations are consistent with the experiment, and indicates that the geometry of the EB-spacer, the area of the Si/SiO interface and the isolation structure could be contributing to the different ionizing radiation damage.