In this work, radiation experiments and simulations were carried out on perovskite solar cells (PSCs). The experimental results show that the PSCs in this work were robust to proton irradiation but more sensitive to electron irradiation, which is different from the results of previous studies. Simulations based on the Monte Carlo method show that the energy loss at the interface was much higher than that in the material bulk, and the interface was more sensitive to electron incidents.

Indium phosphide (InP) is widely utilized in the fields of electronics and photovoltaics due to its high electron mobility and high photoelectric conversion efficiency. Strain engineering has been extensively employed in semiconductor devices to adjust physical properties and enhance material performance. In the present work, the band structure and electronic effective mass of InP under different strains are investigated by ab initio calculations. The results show that InP consistently exhibits a direct bandgap under different strains. Both uniaxial strain and biaxial tensile strain exhibit linear effects on the change in bandgap values. However, the bandgap of InP is significantly influenced by uniaxial compressive strain and biaxial tensile strain, respectively. The study of the InP bandgap under different hydrostatic pressures reveals that InP becomes metallic when the pressure is less than −7 GPa. Furthermore, strain also leads to changes in effective mass and the anisotropy of electron mobility. The studies of electronic properties under different strain types are of great significance for broadening the application of InP devices.

Indium phosphide (InP) is an excellent material used in space electronic devices due to its direct band gap, high electron mobility, and high radiation resistance. Displacement damage in InP, such as vacancies, interstitials, and clusters, induced by cosmic particles can lead to the serious degradation of InP devices. In this work, the analytical bond order potential of InP is modified with the short-range repulsive potential, and the hybrid potential is verified for its reliability to simulate the atomic cascade collisions. By using molecular dynamics simulations with the modified potential, the primary damage defects evolution of InP caused by 1–10 keV primary knock-on atoms (PKAs) are studied. The effects of electronic energy loss are also considered in our research. The results show that the addition of electronic stopping loss reduces the number of point defects and weakens the damage regions. The reduction rates of point defects caused by electronic energy loss at the stable state are 32.2% and 27.4% for 10 keV In-PKA and P-PKA, respectively. In addition, the effects of electronic energy loss can lead to an extreme decline in the number of medium clusters, cause large clusters to vanish, and make the small clusters dominant damage products in InP. These findings are helpful to explain the radiation-induced damage mechanism of InP and expand the application of InP devices.

Swift heavy ion (SHI) irradiation has long been used to evaluate the performance of radiation-hard semiconductor devices. However, the in-depth insight into its microscopic processes and damage evolution remains unclear. In this work, the ultrafast microscopic processes within femtosecond timescales under SHI irradiation of four typical semiconductor materials (Si, 4H-SiC, GaN, β-Ga2O3) are investigated by the coupling ab initio and two-temperature model (TTM) methods. The ab initio method is utilized to systematically calculate the temperature-dependent electronic thermodynamic parameters of four semiconductor materials and then incorporated into the TTM to reveal the significance of the intrinsic thermodynamic properties on thermal spike evolution under SHI irradiation. The results demonstrate that stronger electron–phonon coupling accelerates femtosecond thermal processes and promotes more efficient energy transfer from the electronic to lattice subsystems. Lower thermal conductivity suppresses energy diffusion within subsystems, leading to more pronounced energy spikes. These energy spikes induced by the SHI produce instantaneous molten zones where radius variations are correlated with the material melting threshold energy. Under 430 MeV Kr ion irradiation, instantaneous molten zones with radii of 4.64 and 5.70 nm are formed within femtoseconds in GaN and β-Ga2O3, respectively, while no melting occurs in Si or SiC. This work provides essential data for understanding the behavior and microscopic damage processes of semiconductor materials under extreme irradiation conditions.

The degradation properties of Indium phosphide hetero-junction bipolar transistors (InP HBTs) under proton irradiation are studied and modelled using a compact model for pre-irradiation, post-irradiation, and post-annealing. The variation rates of the model parameters, such as the base–emitter saturation current (I_SE) and ideality factor in the ideal region (N_E) in the forward Gummel characteristics, the zero-biased capacitance (C_je) and the grading factor (M_jer) in the BE junction capacitance, and the transit time parameter in the base region (T_fb), are analysed to delve into the degradation mechanism induced by proton irradiation. The displacement damage, induced by proton irradiation in the space charge region of the base–emitter junction and in the quasi-neutral bulk base region, is found to be responsible for the decrease in current gain and cut-off frequency. After annealing, the variation rates of the parameters decrease significantly compared to post-irradiation. This suggests that the recombination of unstable defects leads to a slight recovery in the degradation characteristics of InP HBTs after a period of annealing.

The single-event effects (SEEs) of frequency divider circuits and the radiation tolerance of the hardened circuit are studied in this paper. Based on the experimental results of SEEs in InP HBTs, a transient current model for sensitive transistors is established, taking into account the influence of factors such as laser energy, base-collector junction voltage, and radiation position. Moreover, the SEEs of the (2:1) static frequency divider circuit with the InP DHBT process are simulated under different laser energies by adding the transient current model at sensitive nodes. The effect of the time relationship between the pulsed laser and clock signal are discussed. Changes in differential output voltage and the degradation mechanism of unhardened circuits are analyzed, which are mainly attributed to the cross-coupling effect between the transistors in the differential pair. Furthermore, the inverted output is directly connected to the input, leading to a feedback loop and causing significant logic upsets. Finally, an effective hardened method is proposed to provide redundancy and mitigate the impacts of SEEs on the divider. The simulation results demonstrate a notable improvement in the radiation tolerance of the divider.