Jung-Dae Kwon

Dr. Jung-Dae Kwon


Research Focus & Metrics

Academic Career Length

18Years (2009-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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23 June 2021 in Advanced Functional Materials
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JNJae Hyeon Nam
Jae Hyeon Nam
SOSeyoung Oh
Seyoung Oh
HJHye Yeon Jang
Hye Yeon Jang
OKOjun Kwon
Ojun Kwon
HPHeejeong Park
Heejeong Park
Byungjin ChoByungjin Cho
Byungjin Cho

23 October 2020 in Frontiers in Chemistry
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Journal Article
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YPYu Jin Park
Yu Jin Park
JLJooyoung Lee
Jooyoung Lee
YPYoo Sei Park
Yoo Sei Park
JYJuchan Yang
Juchan Yang
MJMyeong Je Jang
Myeong Je Jang
SCSung Mook Choi
Sung Mook Choi
Under acidic conditions, IrO2 exhibits high catalytic activity with respect to the oxygen evolution reaction (OER). However, the practical application of Ir-based catalysts is significantly limited owing to their high cost in addition to the scarcity of the metal. Therefore, it is necessary to improve the efficiency of the utilization of such catalysts. In this study, IrO2-coated Ti felt (IrO2/Ti) electrodes were prepared as high-efficiency catalysts for the OER under acidic conditions. By controlling the surface roughness of the Ti substrate via wet etching, the optimum Ti substrate surface area for application in the IrO2/Ti electrode was determined. Additionally, the IrO2 film that was electrodeposited on the 30 min etched Ti felt had a large surface area and a uniform morphology. Furthermore, there were no micro-cracks and the electrode obtained (IrO2/Ti-30) exhibited superior catalytic performance with respect to the OER, with a mass activity of 362.3 A gIr-1 at a potential of 2.0 V (vs. RHE) despite the low Ir loading (0.2 mg cm−2). Therefore, this proposed strategy for the development of IrO2/Ti electrodes with substrate surface control via wet etching has potential for application in the improvement of the efficiency of catalyst utilization with respect to the OER.


27 March 2023 in npj Flexible Electronics
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SCSoo-Won Choi
Soo-Won Choi
JPJae-Ho Park
Jae-Ho Park
JSJi-Woo Seo
Ji-Woo Seo
CMChaewon Mun
Chaewon Mun
YKYonghun Kim
Yonghun Kim
JKJung-Dae Kwon
Jung-Dae Kwon
Flexible and transparent thin-film silicon solar cells were fabricated and optimized for building-integrated photovoltaics and bifacial operation. A laser lift-off method was developed to avoid thermal damage during the transfer of light-scattering structures onto colorless polyimide substrates and thus enhance front-incidence photocurrent, while a dual n-type rear window layer was introduced to reduce optical losses, facilitate electron transport for rear incidence, and thus enhance performance during bifacial operation. The introduction of the window layer increased the rear-to-front power conversion efficiency ratio to ~86%. The optimized bifacial power conversion efficiency for front and rear irradiances of 1 and 0.3 sun, respectively, equaled 6.15%, and the average transmittance within 500–800 nm equaled 36.9%. Additionally, the flexible and transparent solar cells fabricated using laser lift-off exhibited good mechanical reliability (i.e., sustained 500 cycles at a bending radius of 6 mm) and were therefore suitable for building-integrated photovoltaics.

21 October 2013 in The Journal of Physical Chemistry C
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Journal Article
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JYJi-Hwan Yang
Ji-Hwan Yang
HJHyung-Hwan Jung
Hyung-Hwan Jung
JSJihoon Seo
Jihoon Seo
KKKwang-Dae Kim
Kwang-Dae Kim
DKDong-Ho Kim
Dong-Ho Kim
SRSeung Yoon Ryu
Seung Yoon Ryu

2 January 2020 in Nanomaterials
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WPWoojin Park
Woojin Park
HJHye Yeon Jang
Hye Yeon Jang
JNJae Hyeon Nam
Jae Hyeon Nam
JKJung-Dae Kwon
Jung-Dae Kwon
Byungjin ChoByungjin Cho
Byungjin Cho
Yonghun KimYonghun Kim
Yonghun Kim
Despite extensive investigations of a wide variety of artificial synapse devices aimed at realizing a neuromorphic hardware system, the identification of a physical parameter that modulates synaptic plasticity is still required. In this context, a novel two-dimensional architecture consisting of a NbSe2/WSe2/Nb2O5 heterostructure placed on an SiO2/p+ Si substrate was designed to overcome the limitations of the conventional silicon-based complementary metal-oxide semiconductor technology. NbSe2, WSe2, and Nb2O5 were used as the metal electrode, active channel, and conductance-modulating layer, respectively. Interestingly, it was found that the post-synaptic current was successfully modulated by the thickness of the interlayer Nb2O5, with a thicker interlayer inducing a higher synapse spike current and a stronger interaction in the sequential pulse mode. Introduction of the Nb2O5 interlayer can facilitate the realization of reliable and controllable synaptic devices for brain-inspired integrated neuromorphic systems.