Maan Alkaisi

Dr. Maan Alkaisi


Research Focus & Metrics

Academic Career Length

27Years (2000-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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17 September 2019 in Micromachines
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Amalraj Peter AmalathasAmalraj Peter Amalathas
Amalraj Peter Amalathas
MAMaan Alkaisi
Maan Alkaisi
Thin film solar cells are one of the important candidates utilized to reduce the cost of photovoltaic production by minimizing the usage of active materials. However, low light absorption due to low absorption coefficient and/or insufficient active layer thickness can limit the performance of thin film solar cells. Increasing the absorption of light that can be converted into electrical current in thin film solar cells is crucial for enhancing the overall efficiency and in reducing the cost. Therefore, light trapping strategies play a significant role in achieving this goal. The main objectives of light trapping techniques are to decrease incident light reflection, increase the light absorption, and modify the optical response of the device for use in different applications. Nanostructures utilize key sets of approaches to achieve these objectives, including gradual refractive index matching, and coupling incident light into guided modes and localized plasmon resonances, as well as surface plasmon polariton modes. In this review, we discuss some of the recent developments in the design and implementation of nanostructures for light trapping in solar cells. These include the development of solar cells containing photonic and plasmonic nanostructures. The distinct benefits and challenges of these schemes are also explained and discussed.

6 July 2016 in Journal of Materials Science: Materials in Electronics
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Amalraj Peter AmalathasAmalraj Peter Amalathas
Amalraj Peter Amalathas
MAMaan Alkaisi
Maan Alkaisi

9 November 2022 in iScience
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Journal Article
Open access
SOSevgi Onal
Sevgi Onal
MAMaan Alkaisi
Maan Alkaisi
VNVolker Nock
Volker Nock
Compressive stress enables the investigation of a range of cellular processes in which forces play an important role, such as cell growth, differentiation, migration, and invasion. Such solid stress can be introduced externally to study cell response and to mechanically induce changes in cell morphology and behavior by static or dynamic compression. Microfluidics is a useful tool for this, allowing one to mimic in vivo microenvironments in on-chip culture systems where force application can be controlled spatially and temporally. Here, we review the mechanical compression applications on cells with a broad focus on studies using microtechnologies and microdevices to apply cell compression, in comparison to off-chip bulk systems. Due to their unique features, microfluidic systems developed to apply compressive forces on single cells, in 2D and 3D culture models, and compression in cancer microenvironments are emphasized. Research efforts in this field can help the development of mechanoceuticals in the future.

11 March 2016 in Journal of Biomedical Materials Research Part A
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LML. M. Murray
L. M. Murray
VNV. Nock
V. Nock
JEJ. J. Evans
J. J. Evans
MAMaan Alkaisi
Maan Alkaisi

30 December 2014 in Journal of Nanobiotechnology
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LMLynn M Murray
Lynn M Murray
VNVolker Nock
Volker Nock
JEJohn J Evans
John J Evans
MAMaan Alkaisi
Maan Alkaisi
It is becoming recognised that traditional methods of culture in vitro on flat substrates do not replicate physiological conditions well, and a number of studies have indicated that the physical environment is crucial to the directed functioning of cells in vivo. In this paper we report the development of a platform with cell-like features that is suitable for in vitro investigation of cell activity. Biological cells were imprinted in hard methacrylate copolymer using soft lithography. The cell structures were replicated at high nanometre scale resolution, as confirmed by atomic force microscopy. Optimisation of the methacrylate-based co-polymer mixture for transparency and biocompatibility was performed, and cytotoxicity and chemical stability of the cured polymer in cell culture conditions were evaluated. Cells of an endometrial adenocarcinoma cell line (Ishikawa) were cultured on bioimprinted substrates. The cells exhibited differential attachment on the bioimprint substrate surface compared to those on areas of flat surface and preferentially followed the pattern of the original cell footprint. The results revealed for the first time that the cancer cells distinguished between behavioural cues from surfaces that had features reminiscent of themselves and that of flat areas. Therefore the imprinted platform will lend itself to detailed studies of relevant physical substrate environments on cell behaviour. The material is not degraded and its permanency allows reuse of the same substrate in multiple experimental runs. It is simple and does not require expensive or specialised equipment. In this work cancer cells were studied, and the growth behaviour of the tumour-derived cells was modified by alterations of the cells’ physical environment. Implications are also clear for studies in other crucial areas of health, such as wound healing and artificial tissues.

1 November 2000 in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
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BRB. Rong
B. Rong
RCRebecca Cheung
Rebecca Cheung
WGWei Gao
Wei Gao
MAMaan Alkaisi
Maan Alkaisi
RRRoger J. Reeves
Roger J. Reeves
We present an investigation of the electrical characteristics of plasma exposed GaN. The specific contact resistance of ohmic contacts fabricated on GaN after argon plasma bombardment for 2.5 min at 0.03 W/cm2 are measured to decrease by a factor of 4 compared to the unetched surface. Gold has been found to be the best material for GaN Schottky diode. A study of the electrical performance of diodes fabricated on plasma exposed GaN has been undertaken. To compare the effect of the chemical versus physical factors, as well as the role played by the ion mass of the etchant species during the etching process on diode behavior, GaN surfaces have been exposed to Ar, N2, as well as SF6+N2 plasmas before diode fabrication. Our data indicate that a plasma with low ion mass etchant species or a dominant chemical mechanism of etching with a high etch rate creates less surface damage. The use of a SF6+N2 plasma should be possible for GaN transistor gate recessing.