SiC wafers, due to their hardness and brittleness, suffer from a low feed rate and a high failure rate during the dicing process. In this study, a novel dual laser beam asynchronous dicing method (DBAD) is proposed to improve the cutting quality of SiC wafers, where a pulsed laser is firstly used to introduce several layers of micro-cracks inside the wafer, along the designed dicing line, then a continuous wave (CW) laser is used to generate thermal stress around cracks, and, finally, the wafer is separated. A finite-element (FE) model was applied to analyze the behavior of CW laser heating and the evolution of the thermal stress field. Through experiments, SiC samples, with a thickness of 200 μm, were cut and analyzed, and the effect of the changing of continuous laser power on the DBAD system was also studied. According to the simulation and experiment results, the effectiveness of the DBAD method is certified. There is no more edge breakage because of the absence of the mechanical breaking process compared with traditional stealth dicing. The novel method can be adapted to the cutting of hard-brittle materials. Specifically for materials thinner than 200 μm, the breaking process in the traditional SiC dicing process can be omitted. It is indicated that the dual laser beam asynchronous dicing method has a great engineering potential for future SiC wafer dicing applications.

Black silicon, which is an attractive material due to its optical properties, is prepared mainly by laser inducing in an SF₆ atmosphere. Considering the effect of SF₆ gas on the environment and human health, here we propose an efficient, economical, and green approach to process large-scale black silicon. In the wavelength range of 0.3–2.5 µm, the role of air could replace SF₆ gas to texture black silicon by laser inducing with appropriate processing parameters. Then, to extend the working window of its excellent light-trapping status, laser-plasma shockwave cleaning was introduced to eliminate the deposition and improve the structures and morphology. The results revealed that the micro-nano structures became higher, denser, and more uniform with increasing cleaning times and deteriorating cleaning velocity, which compensated for the role of S atoms from the ambient SF₆. Moreover, absorptance above 85% in the wavelength range of 0.3–15 µm was realized using our method. The effect of scanning pitch between adjacent rows on large-scale black silicon was also discussed. Our method realized the ultrahigh absorptance of large-scale black silicon fabricated in air from visible to mid-infrared, which is of significance in the field of optoelectronic devices.

Various antireflective structures and methods are proposed to solve the optical loss of Si-based absorber devices. Dual-scale structures have received more concern from researchers in recent years. In this study, the finite difference time domain (FDTD) method is employed to investigate deeply the dependence of optical response on the geometric shape and size of structures. The micron cone shows lower reflectivity than other micron structures. Additionally, the lowest reflectivity region moves with the increasing height size of the cone structure. We proposed creatively a nanoripple-cone structure that maintains low reflectivity properties under varying incident angles whether in the visible region or the near-infrared region. Furthermore, the lower reflectivity is obtained with increasing micron cone and decreasing nanoripple. Finally, the dual-scale nanoripple-cone is fabricated directly and cost-effectively by a femtosecond laser instead of a two-step texture-on-texture way. The measured result shows that the high absorption above 98% extends to the mid-infrared region. This study provides directions for the fabrication of wideband Si-based absorber devices to reduce reflectivity, which exhibits a wide application potential and promotes the evolution of multi-laser processing.

Satellite laser communication, a cornerstone of next-generation global connectivity, is significantly challenged by wavefront distortions of received beams at spaceborne terminals. These distortions come from both intersatellite thermal deformation and atmospheric turbulence. While deep learning-based sensorless correction offers a promising alternative to wavefront sensor-based adaptive optics, existing data-driven approaches often lack integration with physical principles, particularly limiting their performance under strong turbulence. To address this, we propose the Laser Communication Phase Retrieval Unet (LCPR-Unet), a physics-informed neural network for sensorless wavefront sensing and correction. Its key innovation lies in a novel physical loss function that incorporates a varied-weight Strehl loss, which embeds optical performance metrics and their sensitivity to different aberrations directly into the training objective. We evaluate LCPR-Unet through static and dynamic correction experiments. In dynamic turbulence correction, the system achieves power gains of 3.4 dB, 8.59 dB, and 10.79 dB for D/r₀ = 5, 10, and 20, respectively, while reducing average centroid drift to 0.2, 4.52, and 7.6 pixels. These results demonstrate the robustness and effectiveness of our physics-informed approach across varying distortion regimes—from thermal effects to strong turbulence. Our work provides a viable pathway toward enhancing tracking accuracy and communication quality in future satellite laser terminals without relying on wavefront sensors.