Surface plasmon-enhanced electroluminescence (EL) has been demonstrated by incorporating gold (Au) nanoparticles (NPs) in quantum dot light-emitting diode (QLED). Time-resolved photoluminescence (TRPL) spectroscopy reveals that the EL enhancement is ascribed to the near-field enhancement through an effective coupling between excitons of the quantum dot emitters and localized surface plasmons around Au NPs. It is found that the size of Au NPs and the distance between the Au NPs and the emissive layer have significant effects on the performance of QLED. The enhancement can be maximized as the SP resonance wavelength of Au NPs matches well with the PL emission wavelength of the QD film and the distance between Au NPs and the emissive layer maintains 15 nm. The photoluminance (PL) and EL intensity can be enhanced by 4.4 and 1.7 folds with the incorporation of Au NPs. The maximum current efficiency of 4.56 cd/A can be achieved for the resulting QLEDs by incorprating Au NPs with an enhancement factor of 2.0. In addition, the enhancement ratio of 2.2 can be achieved for the lifetime of resulting QLED.

Flexible quantum dot light emitting diodes (QLEDs) have attracted extensive attention owing to the advantages of foldability and their broad application in flexible display devices. In this work, we report high performance, mechanically flexible QLEDs based on ZnO nanoparticles used as an electron transfer layer (ETL). The QLEDs have been fabricated on poly(ethylene-terephthalate) (PET) substrates utilizing a unique structure consisting of bilayered hole transport films and ZnO nanoparticles acting as an ETL to improve the device performance owing to its appropriate energy band position and high charge mobility. The QLEDs exhibited high performance, such as a lowered turn on voltage of 1.6 V and improved current and power efficiencies of 5.20 cd A⁻¹ and 1.80 lm W⁻¹, respectively. They presented good flexibility with a critical bending radius of 4.5 mm, suggesting the broad application potential of flexible QLEDs.

Broadband absorption of electromagnetic waves in different wavelength regions is desired for applications ranging from highly efficient solar cells, waste heat harvesting, multi-color infrared (IR) detection to sub-ambient radiative cooling. Taper-shaped structures made up of alternating metal/dielectric multilayers offer the broadest absorption bandwidth so far, but face a trade-off between optical performance and material choice, i.e., those with the broadest bandwidth utilize exclusively CMOS-incompatible materials, hampering their large-scale applications. In this work, through careful examination of the unique material property of aluminum (Al) and zinc sulfide (ZnS), a sawtooth-like and a pyramid-like multilayer absorber is proposed, whose working bandwidth (0.2-15 µm) covers from ultraviolet (UV) all the way to long-wave infrared (LWIR) range, being compatible with CMOS technology at the same time. The working principle of broadband absorption is elucidated with effective hyperbolic metamaterial model plus the excitation of multiple slow-light modes. Absorption performance such as polarization and incidence-angle dependence are also investigated. The proposed Al-ZnS multilayer absorbers with ultra-broadband near-perfect absorption may find potential applications in infrared imaging and spectroscopy, radiative cooling, solar energy conversion, etc.

In this paper, we proposed and experimentally verified a diffraction-based optical beam shaping technique for underwater optical communication (UWOC) applications. The proposed method aimed to address the key issue in UWOC links, i.e., the high propagation loss experienced by the launched optical beam. It enabled a significantly higher portion of the launched signal to be collected by the receiver. The optimal transmission distance could also be fine-tuned by the software configuration. In a proof-of-concept demonstration based on the off-the-shelf components, 100 Mbps transmission was achieved over 15-meter distance and a significant enhancement in the transmission quality was observed. There is a huge scope for further improvement in the transmission distance and data rate when the proposed technique was used with purpose-built optical components and advanced coding schemes.

SiC wafers, due to their hardness and brittleness, suffer from a low feed rate and a high failure rate during the dicing process. In this study, a novel dual laser beam asynchronous dicing method (DBAD) is proposed to improve the cutting quality of SiC wafers, where a pulsed laser is firstly used to introduce several layers of micro-cracks inside the wafer, along the designed dicing line, then a continuous wave (CW) laser is used to generate thermal stress around cracks, and, finally, the wafer is separated. A finite-element (FE) model was applied to analyze the behavior of CW laser heating and the evolution of the thermal stress field. Through experiments, SiC samples, with a thickness of 200 μm, were cut and analyzed, and the effect of the changing of continuous laser power on the DBAD system was also studied. According to the simulation and experiment results, the effectiveness of the DBAD method is certified. There is no more edge breakage because of the absence of the mechanical breaking process compared with traditional stealth dicing. The novel method can be adapted to the cutting of hard-brittle materials. Specifically for materials thinner than 200 μm, the breaking process in the traditional SiC dicing process can be omitted. It is indicated that the dual laser beam asynchronous dicing method has a great engineering potential for future SiC wafer dicing applications.

In this paper, a photo-modulated transistor based on the thin-film transistor structure was fabricated on the flexible substrate by spin-coating and magnetron sputtering. A novel hybrid material that composed of CdSe quantum dots and reduced graphene oxide (RGO) fragment-decorated ZnO nanowires was synthesized to overcome the narrow optical sensitive waveband and enhance the photo-responsivity. Due to the enrichment of the interface and heterostructure by RGO fragments being utilized, the photo-responsivity of the transistor was improved to 2000 A W⁻¹ and the photo-sensitive wavelength was extended from ultraviolet to visible. In addition, a positive back-gate voltage was employed to reduce the Schottky barrier width of RGO fragments and ZnO nanowires. As a result, the amount of carriers was increased by 10 folds via the modulation of back-gate voltage. With these inherent properties, such as integrated circuit capability and wide optical sensitive waveband, the transistor will manifest great potential in the future applications in photodetectors.