A novel silver (Ag) deposition-based electrochromic device was developed for the reversible electrodeposition (RED) system. The electrochromic device can switch between transparent and mirror states in response to a change in the applied voltage. The dynamic range of the transmittance percent (%) for the fabricated device was about 90% at the 550 nm wavelength. A large-area RED display system was also successfully fabricated using the parted electrochromic cells of the honeycomb structure. The interelectrode space and the extent of the large-area RED display system were 50 μm and 10×10 cm, respectively.

High quality indium tin oxide (ITO) thin films were grown by pulse laser deposition (PLD) on flexible polyethersulphone (PES) substrates. The electrical, optical, and surface morphological properties of these films were examined as a function of substrate temperature and oxygen pressure. ITO thin films, deposited by PLD on a PES substrate at room temperature and an oxygen pressure of 15 mTorr, have a low electrical resistivity of 2.9×10⁻⁴ Ω cm and a high optical transmittance of 84 % in the visible range. They were used as the anode in organic light-emitting diodes (OLEDs). The maximum electro luminescence (EL) and current density at 100 cd/m² were 2500 cd/m² and 2 mA/cm², respectively, and the external quantum efficiency of the OLEDs was found to be 2.0 %.

Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. The peak position of the photoluminescence can be controlled within a wavelength of 500 to 650 nm by adjusting the flow rate of the silane gas. We suggest that this phenomenon is attributed to the quantum confinement effect of hexagonal Si-NCs in silicon carbide-based film with a change in the sizes and emission states of the NCs.

Camouflage technology is essential in security and military applications, aiming to delay and mislead detection by humans and surveillance systems. As surveillance capabilities expand to detect across multiple wavelength bands, traditional single‐band camouflage approaches encounter limitations. This study introduces a multi‐band adaptive camouflage device that integrates an electrophoretic display (EPD) with an electrochromic device (ECD) to conceal visible and near‐infrared(NIR) spectra effectively. Dual‐band functionality is achieved with the ECD, delivering effective infrared(IR) camouflage and optical shutter functionality in the visible range, while the EPD enables rapid switching and versatile color expression. These devices feature bistability and high operational stability, ensuring energy efficiency and long‐term durability. Additionally, a 7 × 7 pixel array enables independent control of each pixel, facilitating the formation of varied patterns to adapt camouflage to diverse environmental settings. This work presents a promising direction for next‐generation camouflage solutions, offering extensive application potential in both military and civilian security domains and addressing the evolving requirements of multi‐spectral detection.