The p-type characteristic of solution-processed metal halide perovskite transistors means that they could be used in combination with their n-type counterparts, such as indium–gallium–zinc-oxide transistors, to create complementary metal–oxide–semiconductor-like circuits. However, the performance and stability of perovskite-based transistors do not yet match their n-type counterparts, which limit their broader application. Here we report high-performance p-channel perovskite thin-film transistors based on inorganic caesium tin triiodide semiconducting layers that have moderate hole concentrations and high Hall mobilities. The perovskite channels are formed by engineering the film composition and crystallization process using a tin-fluoride-modified caesium-iodide-rich precursor with lead substitution. The optimized transistors exhibit field-effect hole mobilities of over 50 cm² V⁻¹ s⁻¹ and on/off current ratios exceeding 10⁸, as well as high operational stability and reproducibility.

Direct full-color photodetectors without sophisticated color filters and interferometric optics have attracted considerable attention for widespread applications. However, difficulties of combining various multispectral semiconductors and improving photon transfer efficiency for high-performance optoelectronic devices have impeded the translation of these platforms into practical realization. Here, we report a low-temperature (4.2 × 10¹⁷ Jones) and photoresponsivity (>8.3 × 10³ A W⁻¹) in a broad range of wavelengths (365 to 1310 nm). On the basis of these technologies, a wavelength discriminable phototransistor circuit array (>600 phototransistors) was implemented on a skin-like soft platform, which is expected to be a versatile and scalable approach for wide spectral image sensors and human-oriented biological devices.

‘Ideal’ transparent p-type semiconductors are required for the integration of high-performance thin-film transistors (TFTs) and circuits. Although CuI has recently attracted attention owing to its excellent opto-electrical properties, solution processability, and low-temperature synthesis, the uncontrolled copper vacancy generation and subsequent excessive hole doping hinder its use as a semiconductor material in TFT devices. In this study, we propose a doping approach through soft chemical solution process and transparent p-type Zn-doped CuI semiconductor for high-performance TFTs and circuits. The optimised TFTs annealed at 80 °C exhibit a high hole mobility of over 5 cm² V⁻¹ s⁻¹ and high on/off current ratio of ~10⁷ with good operational stability and reproducibility. The CuI:Zn semiconductors show intrinsic advantages for next-generation TFT applications and wider applications in optoelectronics and energy conversion/storage devices. This study paves the way for the realisation of transparent, flexible, and large-area integrated circuits combined with n-type metal-oxide semiconductor.

The environmentally benign synthesis of ultra-long copper nanowires with successful control of diameter and length for stretchable transparent conducting electrodes (TCEs) is reported. Ultra-long copper nanowires (CuNWs) with an average length of 92.5 μm (maximum length up to 260 μm) and an average diameter of 47 nm were synthesized using environmentally friendly water–alcohol mixtures and L-ascorbic acid as a reducing agent. A facile removal of insulating surface layers, such as organic capping molecules and copper oxide/hydroxide, by short-chain organic acid treatment allowed low contact resistance between the CuNWs without post-reductive treatment at elevated temperatures. The CuNWs were directly spray-coated on glass or polydimethylsiloxane (PDMS) at a low processing temperature of 130 °C. The CuNW TCE on a glass substrate exhibited a low sheet resistance of 23.1 Ohm sq⁻¹ and a high optical transmittance of 84.1% at 550 nm. Furthermore, the CuNWs were directly spray-coated on stretchable PDMS, which showed a low sheet resistance of 4.1 Ohm sq⁻¹ and a high optical transmittance of 70% at 550 nm.

The emergence of high-form-factor electronics has led to a demand for high-density integration of inorganic thin-film devices and circuits with full stretchability. However, the intrinsic stiffness and brittleness of inorganic materials have impeded their utilization in free-form electronics. Here, we demonstrate highly integrated strain-insensitive stretchable metal-oxide transistors and circuitry (442 transistors/cm²) via a photolithography-based bottom-up approach, where transistors with fluidic liquid metal interconnection are embedded in large-area molecular-tailored heterogeneous elastic substrates (5 × 5 cm²). Amorphous indium-gallium-zinc-oxide transistor arrays (7 × 7), various logic gates, and ring-oscillator circuits exhibited strain-resilient properties with performance variation less than 20% when stretched up to 50% and 30% strain (10,000 cycles) for unit transistor and circuits, respectively. The transistors operate with an average mobility of 12.7 ( ± 1.7) cm² V⁻¹s⁻¹, on/off current ratio of > 10⁷, and the inverter, NAND, NOR circuits operate quite logically. Moreover, a ring oscillator comprising 14 cross-wired transistors validated the cascading of the multiple stages and device uniformity, indicating an oscillation frequency of ~70 kHz.