A series of bithienyl-terminated surfactants with various alkyl chain lengths (from C8 to C13) and phosphono or chlorodimethylsilyl anchoring groups were synthesized by palladium-catalyzed hydrophosphonation, or platinum-catalyzed hydrosilylation as a key step. Surfactants were tested in pentacene or α-sexithiophene-based organic field-effect transistors (OFETs) for the modification of the dielectric surface. The studied surfactants increased the effective mobility of the α-sexithiophene-based device by up to one order of magnitude. The length of alkyl chain showed to be significant for the pentacene-based device, as the effective mobility only increased in the case of dielectric modification with bithienylundecylphosphonic acid. AFM allowed a better understanding of the morphology of semiconductors on bare SiO₂ and surfaces treated with bithienylundecylphosphonic acid.

In this study, a comparison is made between two Atomic Force Microscopy (AFM) vibration-isolation measures: a passive anti-vibration table and an acoustic isola In this study, a comparison is made between two Atomic Force Microscopy (AFM) vibration-isolation measures: a passive anti-vibration table and an acoustic isola

Amorphous precursors of A: (Fe₆₄Co₂₁B₁₅)₉₅P₄Cu₁ and B: (Fe₆₄Co₂₁B₁₅)₉₆P₄ alloys were used. Nanocrystalline structure was created by heat treatment. Samples were studied by Mössbauer spectroscopy, XRD and AFM. Cu ions of dose 10¹⁶ at/cm² were implanted into the amorphous B. According to simulated program we estimated that Cu ions created surface layer with a thickness of a few micrometres. Changes in bulk structure were not observed at parameters of Mössbauer spectra after implantation. After heat treatment the implanted sample was nearly identical with the nanocrystalline sample of A. Implantation had an influence on the volumetric fraction of the constituent phases and on their magnetic microstructure. Implantation of Cu ions in amorphous precursor containing Cu as A caused after heat treatment in nanocrystalline state increasing of nanocrystalline component. This technology of preparation of nanocrystalline alloys indicate that implantation of ions into an amorphous precursor has an influence on the final structure and properties of nanocrystalline alloy.