Sodium-ion batteries (SIBs) have demonstrated noticeable development since the 2010s, being complementary to the lithium-ion technology in predominantly large-scale application niches. The projected SIB market growth will inevitably lead to the generation of tons of spent cells, posing a notorious issue for proper battery lifecycle management, which requires both the establishment of a regulatory framework and development of technologies for recovery of valuable elements from battery waste. While lithium-ion batteries are mainly based on layered oxides and lithium iron phosphate chemistries, the variety of sodium-ion batteries is much more diverse, extended by a number of other polyanionic families (crystal types), such as NASICON (Na₃V₂(PO₄)₃), Na₃V₂(PO₄)₂F_3−yO_y, (0 ≤ y ≤ 2), KTiOPO₄-type AVPO₄X (A—alkali metal cation, X = O, F) and β-NaVP₂O₇, with all of them relying on vanadium and phosphorous—critical elements in a myriad of industrial processes and technologies. Overall, the greater chemical complexity of these vanadium-containing phosphate materials highlights the need for designing specific recycling approaches based on distinctive features of vanadium and phosphorus solution chemistry, fine-tuned for the particular electrodes used. In this paper, an overview of recycling methods is presented with a focus on emerging chemistries for SIBs.

The hydrothermal method is an effective approach for the synthesis of VO₂ films with unique crystallites morphology and sharp electrical and optical switch properties.

Hydrothermal synthesis has been used to prepare textured Ti_{1– x}V_xO₂ coatings on the surface of r-Al₂O₃ single-crystal substrates using ammonium hexafluorotitanate and vanadyl oxalate complex as precursors. The obtained samples have been characterized by X-ray diffraction, scanning electron microscopy, and X-ray spectral microanalysis.

Platinum-based thin films are widely used to create microelectronic devices operating at temperatures above 500 °C. One of the most effective ways to increase the high-temperature stability of platinum-based films involves incorporating refractory metal oxides (e.g., ZrO₂, HfO₂). In such structures, refractory oxide is located along the metal grain boundaries and hinders the mobility of Pt atoms. However, the effect of annealing conditions on the morphology and functional properties of such multiphase systems is rarely studied. Here, we show that the two-step annealing of 250-nm-thick Pt-Rh/Zr multilayer films instead of the widely used isothermal annealing leads to a more uniform film morphology without voids and hillocks. The composition and morphology of as-deposited and annealed films were investigated using X-ray diffraction and scanning electron microscopy, combined with energy-dispersive X-ray spectroscopy. At the first annealing step at 450 °C, zirconium oxidation was observed. The second high-temperature annealing at 800–1000 °C resulted in the recrystallization of the Pt-Rh alloy. In comparison to the one-step annealing of Pt-Rh and Pt-Rh/Zr films, after two-step annealing, the metal phase in the Pt-Rh/Zr films has a smaller grain size and a less pronounced texture in the direction, manifesting enhanced high-temperature stability. After two-step annealing at 450/900 °C, the Pt-Rh/Zr thin film possessed a grain size of 60 ± 27 nm and a resistivity of 17 × 10⁻⁶ Ω·m. The proposed annealing protocol can be used to create thin-film MEMS devices for operation at elevated temperatures, e.g., microheater-based gas sensors.