Lithium nickelate (LiNiO₂) and materials based on it are attractive positive electrode materials for lithium-ion batteries, owing to their large capacity. In this paper, the results of atomic layer deposition (ALD) of lithium–nickel–silicon oxide thin films using lithium hexamethyldisilazide (LiHMDS) and bis(cyclopentadienyl) nickel (II) (NiCp₂) as precursors and remote oxygen plasma as a counter-reagent are reported. Two approaches were studied: ALD using supercycles and ALD of the multilayered structure of lithium oxide, lithium nickel oxide, and nickel oxides followed by annealing. The prepared films were studied by scanning electron microscopy, spectral ellipsometry, X-ray diffraction, X-ray reflectivity, X-ray photoelectron spectroscopy, time-of-flight secondary ion mass spectrometry, energy-dispersive X-ray spectroscopy, transmission electron microscopy, and selected-area electron diffraction. The pulse ratio of LiHMDS/Ni(Cp)₂ precursors in one supercycle ranged from 1/1 to 1/10. Silicon was observed in the deposited films, and after annealing, crystalline Li₂SiO₃ and Li₂Si₂O₅ were formed at 800 °C. Annealing of the multilayered sample caused the partial formation of LiNiO₂. The obtained cathode materials possessed electrochemical activity comparable with the results for other thin-film cathodes.

Nanostructured metal oxides (MOs) demonstrate good electrochemical properties and are regarded as promising anode materials for high-performance lithium-ion batteries (LIBs). The capacity of nickel-cobalt oxides-based materials is among the highest for binary transition metals oxide (TMOs). In the present paper, we report the investigation of Ni-Co-O (NCO) thin films obtained by atomic layer deposition (ALD) using nickel and cobalt metallocenes in a combination with oxygen plasma. The formation of NCO films with different ratios of Ni and Co was provided by ALD cycles leading to the formation of nickel oxide (a) and cobalt oxide (b) in one supercycle (linear combination of a and b cycles). The film thickness was set by the number of supercycles. The synthesized films had a uniform chemical composition over the depth with an admixture of metallic nickel and carbon up to 4 at.%. All samples were characterized by a single NixCo1-xO phase with a cubic face-centered lattice and a uniform density. The surface of the NCO films was uniform, with rare inclusions of nanoparticles 15–30 nm in diameter. The growth rates of all films on steel were higher than those on silicon substrates, and this difference increased with increasing cobalt concentration in the films. In this paper, we propose a method for processing cyclic voltammetry curves for revealing the influence of individual components (nickel oxide, cobalt oxide and solid electrolyte interface—SEI) on the electrochemical capacity. The initial capacity of NCO films was augmented with an increase of nickel oxide content.

The tantalum oxide thin films are promising materials for various applications: as coatings in optical devices, as dielectric layers for micro and nanoelectronics, and for thin-films solid-state lithium-ion batteries (SSLIBs). This article is dedicated to the Ta-O thin-film system synthesis by the atomic layer deposition (ALD) which allows to deposit high quality films and coatings with excellent uniformity and conformality. Tantalum (V) ethoxide (Ta(OEt)₅) and remote oxygen plasma were used as tantalum-containing reagent and oxidizing co-reagent, respectively. The influence of deposition parameters (reactor and evaporator temperature, pulse and purge times) on the growth rate were studied. The thickness of the films were measured by spectroscopic ellipsometry, scanning electron microscopy and X-ray reflectometry. The temperature range of the ALD window was 250–300 °C, the growth per cycle was about 0.05 nm/cycle. Different morphology of films deposited on silicon and stainless steel was found. According to the X-ray diffraction data, the as-prepared films were amorphous. But the heat treatment study shows crystallization at 800 °C with the formation of the polycrystalline Ta₂O₅ phase with a rhombic structural type (Pmm2). The results of the X-ray reflectometry show the Ta-O films’ density is 7.98 g/cm³, which is close to the density of crystalline Ta₂O₅ of the rhombic structure (8.18 g/cm³). The obtained thin films have a low roughness and high uniformity. The chemical composition of the surface and bulk of Ta-O coatings was studied by X-ray photoelectron spectroscopy and energy-dispersive X-ray spectroscopy. Surface of the films contain Ta₂O₅ and some carbon contamination, but the bulk of the films does not contain carbon and any precursor residues. Cyclic voltammetry (CVA) showed that there is no current increase for tantalum (V) oxide in a potential window of 3–4.2 V and has prospects of use as protective coatings for cathode materials of SSLIBs.

The active development of the power electronics market and a constant increase in the prices of components require new materials and approaches, including a power module packaging technology. The use of aluminum instead of copper in the power module baseplate is an interesting and promising solution. The insulated metal baseplate is one of the most extensively developed technologies nowadays. The object of this study is an insulated metal substrate based on anodized aluminum. The main goal of the article is the comparison of copper topology adhesion to an anodized aluminum oxide layer formed on different aluminum alloys with aluminum content of at least 99.3 wt %. Peel test and pull-off adhesions showed a twofold difference for both aluminum alloys. The high ordered defect-free anodized alumina formed on alloys with copper content of 0.06 wt % had a mean pull-off adhesion of 27 N/mm² and hardness of 489 HV. In the case of the alloy with copper content of around 0.15 wt %, it had hardness of 295 HV and a mean pull-off adhesion of 12 N/mm². The results of our microstructure investigation showed that anodized alumina based on alloys with copper content of around 0.15 wt % is fragile due to spherical holes. Summing up the results, it can be concluded that not all initial impurities are critical for anodized alumina, but some, specifically copper, dramatically decreased the mechanical properties of anodized alumina.