During the last few years graphene has emerged as a potential candidate for electronics and optoelectronics applications due to its several salient features. Graphene is a smart material that responds to any physical change in its surrounding environment. Graphene has a very low intrinsic electronic noise and it can detect even a single gas molecule in its proximity. This property of graphene makes is a suitable and promising candidate to detect a large variety of organic/inorganic chemicals and gases. Typical solid state gas sensors usually requires high operating temperature and they cannot detect very low concentrations of gases efficiently due to intrinsic noise caused by thermal motion of charge carriers at high temperatures. They also have low resolution and stability issues of their constituent materials (such as electrolytes, electrodes, and sensing material itself) in harsh environments. It accelerates the need of development of robust, highly sensitive and efficient gas sensor with low operating temperature. Graphene and its derivatives could be a prospective replacement of these solid-state sensors due to their better electronic attributes for moderate temperature applications. The presence of extremely low intrinsic noise in graphene makes it highly suitable to detect a very low concentration of organic/inorganic compounds (even a single molecule ca be detected with graphene). In this article, we simulated a novel graphene nanoribbon based field effect transistor (FET) and used it to detect propane and butane gases. These are flammable household/industrial gases that must be detected to avoid serious accidents. The effects of atmospheric oxygen and humidity have also been studied by mixing oxygen and water molecules with desired target gases (propane and butane). The change in source-to-drain current of FET in the proximity of the target gases has been used as a detection signal. Our simulated FET device showed a noticeable change in density of states and IV-characteristics in the presence of target gas molecules. Nanoscale simulations of FET based gas sensor have been done in Quantumwise Atomistix Toolkit (ATK). ATK is a commercially available nanoscale semiconductor device simulator that is used to model a large variety of nanoscale devices. Our proposed device can be converted into a physical device to get a low cost and small sized integrated gas sensor.

Over the last decade graphene based electronic devices have attracted the interest of researchers due to their exceptional chemical, electrical and optical properties. Graphene is very sensitive to any physical changes in its surrounding environment and, inherently, has very low electronic noise. This property of graphene makes it a suitable candidate for sensor applications. The purpose of the work presented in this article is to demonstrate the ability of graphene derivatives to detect toxic organic compounds like phenol and methanol. A novel method for the detection of organic compounds (phenol and methanol) has been introduced in this article. In this method, a change in the photocurrent, as well as electric current, have been used as detection signals to improve the sensor accuracy and selectivity for specific target molecules. A nanoscale electronic device simulator, Quantumwise Atomistix Toolkit (ATK), has been used to simulate graphene nanosheet and armchair graphene nanoribbon based sensors. Devices density of states (DOS), current–voltage curves and photocurrent curves have been calculated with the ATK simulator. In the proximity of target molecules, a significant change in DOS, electric current and photocurrent have been observed. The simulated graphene based structures can be converted into physical sensors to obtain a low cost, small sized, integrated sensing device.

Recently, quantum-dot-based core/shell structures have gained significance due to their optical, optoelectronic, and magnetic attributes. Controlling the fluorescence lifetime of QDs shells is imperative for various applications, including light-emitting diodes and single-photon sources. In this work, novel Cu-doped CdS/ZnS shell structures were developed to enhance the photoluminescence properties. The objective was to materialize the Cu-doped CdS/ZnS shells by the adaptation of a two-stage high-temperature doping technique. The developed nanostructures were examined with relevant characterization techniques such as transmission electron microscopy (TEM) and ultraviolet–visible (UV–vis) emission/absorption spectroscopy. Studying fluorescence, we witnessed a sharp emission peak at a wavelength of 440 nm and another emission peak at a wavelength of 620 nm, related to the fabricated Cu-doped CdS/ZnS core/shell QDs. Our experimental results revealed that Cu-doped ZnS shells adopted the crystal structure of CdS due to its larger bandgap. Consequently, this minimized lattice mismatch and offered better passivation to any surface defects, resulting in increased photoluminescence. Our developed core/shells are highly appropriate for the development of efficient light-emitting diodes.

In the last decade, silicon carbide (SiC) has emerged as a potential material for high-frequency electronics and optoelectronics applications that may require elevated temperature processing. SiC exists in more than 200 different crystallographic forms, referred to as polytypes. Based on their remarkable physical and electrical characteristics, such as better thermal and electrical conductivities, 3C-SiC, 4H-SiC, and 6H-SiC are considered as the most distinguished polytypes of SiC. In this article, physical device simulation of a light-emitting diode (LED) based on the unique structural configuration of 4H-SiC and 6H-SiC layers has been performed which corresponds to a novel material joining technique, called diffusion welding/bonding. The proposed single quantum well (SQW) edge-emitting SiC-based LED has been simulated using a commercially available semiconductor device simulator, SILVACO TCAD. Moreover, by varying different design parameters, the current-voltage characteristics, luminous power, and power spectral density have been calculated. Our proposed LED device exhibited promising results in terms of luminous power efficiency and external quantum efficiency (EQE). The device numerically achieved a luminous efficiency of 25% and EQE of 16.43%, which is at par performance for a SQW LED. The resultant LED structure can be customized by choosing appropriate materials of varying bandgaps to extract the light emission spectrum in the desired wavelength range. It is anticipated that the physical fabrication of our proposed LED by direct bonding of SiC-SiC wafers will pave the way for the future development of efficient and cost-effective SiC-based LEDs.

Carbon nanotubes (CNTs)-based sensors have gained significant importance due to their tremendous electrical and physical attributes. CNT-based gas sensors have high sensitivity, stability, and fast response time compared to that of solid-state sensors. On exposure to a large variety of organic and inorganic compounds, the conductivity of CNT changes. This change in electrical conductivity is being used as a detection signal to detect different target molecules. Hydrogen-sulfide and benzene are hazardous gases that can cause serious health issues in humans. Therefore, it is mandatory to detect their presence in industrial and household environments. In this article, we simulated CNT-based benzene and hydrogen-sulfide sensor with a nanoscale semiconductor device simulator—Quantumwise Atomistix Toolkit (ATK). The change in the device density of states, electric current, and photocurrent in the presence of target molecules have been calculated. The change in photocurrent in the presence of target molecules has been proposed as a novel detection mechanism to improve the sensor selectivity and accuracy. This change in photocurrent as well as electric current in the presence of target molecules can be used simultaneously as detection signals. Our intension in the future is to physically fabricate this simulated device and use photocurrent as well as electric current as detection mechanisms.