Compared to aluminum nitride (AlN) with simple stoichiometry, lead zirconate titanate thin films (PZT) are the other promising candidate in advanced micro-electro-mechanical system (MEMS) devices due to their excellent piezoelectric and dielectric properties. The fabrication of PZT thin films with a large area is challenging but in urgent demand. Therefore, it is necessary to establish the relationships between synthesis parameters and specific properties. Compared to sol-gel and pulsed laser deposition techniques, this review highlights a magnetron sputtering technique owing to its high feasibility and controllability. In this review, we survey the microstructural characteristics of PZT thin films, as well as synthesis parameters (such as substrate, deposition temperature, gas atmosphere, and annealing temperature, etc.) and functional proper-ties (such as dielectric, piezoelectric, and ferroelectric, etc). The dependence of these influential factors is particularly emphasized in this review, which could provide experimental guidance for researchers to acquire PZT thin films with expected properties by a magnetron sputtering technique.

Engineering the surface orientation of face-centered cubic (fcc) metals to the close-packed {111} plane can significantly enhance their oxidation resistance. However, owing to the synergetic effect of surface energy density ($\dot{\gamma }$) and strain energy density ($\omega$), such close-packed surface orientation can currently only be achieved by atomic-level thin film epitaxy or monocrystallization of polycrystalline metals. In this study, we characterized the microstructures of pure copper (Cu) foil and two types of graphene-coated Cu (Gr/Cu) foils and observed a 12~14 nm thick reconstructed surface layer with the {111} orientation in the high-temperature deposited Gr/{001} Cu surface. Combining the statistical results with thermodynamic analysis, we proposed a surface melting-solidification mechanism for the reconstruction of the Cu surface from {001} orientation to {111} orientation. This process is dominated by Gr/Cu interfacial energy and is particularly promoted by high-temperature surface melting. We also validated such a mechanism by examining Cu surfaces coated by h-BN (hexagonal boron nitride) and amorphous carbon. Our findings suggest a possible strategy to enhance the surface properties of fcc metals via engineering surface crystallography.

Compared to the bulk piezoelectric materials counterpart, piezoelectric thin films (PTFs) possess advantages of smaller size, lower power consumption, better sensitivity, and have broad application in advanced micro-electro-mechanical system (MEMS) devices. However, the performance of MEMS transducers and actuators are largely limited by PTFs piezoelectric properties. In this review, we focus on understanding structure-property relationship of vapor deposited PTFs, with emphasis on the effect of strain energy and electrostatic energy in thin films, especially, energy relaxation induced misfit dislocation and ferroelectric (FS) and ferroelastic (FC) domain formation mechanisms. We then discuss the microstructure of these domains and their influential mechanisms on piezoelectric properties, as well as the domain engineering strategies (i.e., internal and external stimuli). This review will motivate further experimental, theoretical, and simulation studies on FS and FC domain engineering in PTFs.

Lead zirconate titanate (PZT) films have shown great potential in piezoelectric micro-electronic-mechanical system (piezo-MEMS) owing to their strong piezoelectric response. However, the fabrication of PZT films on wafer-level suffers with achieving excellent uniformity and properties. Here, we successfully prepared perovskite PZT films with similar epitaxial multilayered structure and crystallographic orientation on 3-inch silicon wafers, by introducing a rapid thermal annealing (RTA) process. Compared to films without RTA treatment, these films exhibit (001) crystallographic orientation at certain composition that expecting morphotropic phase boundary. Furthermore, dielectric, ferroelectric and piezoelectric properties on different positions only fluctuate within 5%. The relatively dielectric constant, loss, remnant polarization and transverse piezoelectric coefficient are 850, 0.1, 38 μC/cm² and −10 C/m², respectively. Both uniformity and properties have reached the requirement for the design and fabrication of piezo-MEMS devices. This broadens the design and fabrication criteria for piezo-MEMS, particularly for piezoelectric micromachined ultrasonic transducers.

Graphene (Gr) has shown great potential in the field of oxidation protection for metals. However, numerous studies have shown that Gr will suffer structural degradation on metal surface during high-temperature oxidation, which significantly limited the effectiveness of their oxidation protection. Therefore, understanding the degradation mechanism of Gr is of great interest to enhance their structural stability. Here, the effect of copper (Cu) surface roughness on the high-temperature structural stability of single-layer graphene (SLG) was examined using Cu covered with SLG as a model material. SLG/Cu with different roughness values was obtained via high-temperature annealing of the model material. After high-temperature oxidation at 500 °C, Raman spectra analysis showed that the defect density of the oxidized SLG increased from 41% to 81% when the surface roughness varied from 37 nm to 81 nm. Combined with density functional theory calculations, it was found that the lower formation energy of the C-O bond on rough Cu surfaces (0.19 eV) promoted the formation of defects in SLG. This study may provide guidance for improving the effectiveness of SLG for the oxidation protection of metallic materials.

High-radio-frequency (RF) conductivity is required in advanced electronic materials to reduce the electromagnetic loss and power dissipation of electronic devices. Graphene/copper (Gr/Cu) multilayers possess higher conductivity than silver under direct current conditions. However, their RF conductivity and detailed mechanisms have rarely been evaluated at the micro scale. In this work, the RF conductivity of copper–copper (P-Cu), monolayer-graphene/copper (S-Gr/Cu), and multilayer-graphene/copper (M-Gr/Cu) multilayer structures were evaluated using scanning microwave impedance microscopy (SMIM) and dielectric resonator technique. The results indicated that the order of RF conductivity was M-Gr/Cu < P-Cu < S-Gr/Cu at 3 GHz, contrasting with P-Cu < M-Gr/Cu < S-Gr/Cu at DC condition. Meanwhile, the same trend of M-Gr/Cu < P-Cu < S-Gr/Cu was also observed using the dielectric resonator technique. Based on the conductivity-related Drude model and scattering theory, we believe that the microwave radiation can induce a thermal effect at S-Gr/Cu interfaces, leading to an increasing carrier concentration in S-Gr. In contrast, the intrinsic defects in M-Gr introduce additional carrier scattering, thereby reducing the RF conductivity in M-Gr/Cu. Our research offers a practical foundation for investigating conductive materials under RF conditions.