Songang Peng

Dr. Songang Peng

Institute of Microelectronics, Chinese Academy of Sciences (IMECAS), Beijing 100029, China
orcid

Research Focus & Metrics

Academic Career Length

13Years (2014-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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16 February 2024 in Nano-Micro Letters
Verified
Journal Article
Open access
PDF file
ALAnhan Liu
Anhan Liu
XZXiaowei Zhang
Xiaowei Zhang
ZLZiyu Liu
Ziyu Liu
YLYuning Li
Yuning Li
XPXueyang Peng
Xueyang Peng
TRTian-Ling Ren
Tian-Ling Ren
Due to the constraints imposed by physical effects and performance degradation, silicon-based chip technology is facing certain limitations in sustaining the advancement of Moore’s law. Two-dimensional (2D) materials have emerged as highly promising candidates for the post-Moore era, offering significant potential in domains such as integrated circuits and next-generation computing. Here, in this review, the progress of 2D semiconductors in process engineering and various electronic applications are summarized. A careful introduction of material synthesis, transistor engineering focused on device configuration, dielectric engineering, contact engineering, and material integration are given first. Then 2D transistors for certain electronic applications including digital and analog circuits, heterogeneous integration chips, and sensing circuits are discussed. Moreover, several promising applications (artificial intelligence chips and quantum chips) based on specific mechanism devices are introduced. Finally, the challenges for 2D materials encountered in achieving circuit-level or system-level applications are analyzed, and potential development pathways or roadmaps are further speculated and outlooked.

19 January 2023 in ACS Sensors
Verified
Journal Article
Closed access
Jinbo PangJinbo Pang
Jinbo Pang
SPSongang Peng
Songang Peng
CHChongyang Hou
Chongyang Hou
HZHongbin Zhao
Hongbin Zhao
YFYingju Fan
Yingju Fan
Gianaurelio CunibertiGianaurelio Cuniberti
Gianaurelio Cuniberti

19 August 2020 in Advanced Electronic Materials
Verified
Journal Article
Closed access
PDF file
SPSongang Peng
Songang Peng
Zhi JinZhi Jin
Zhi Jin
YYYao Yao
Yao Yao
XHXinnan Huang
Xinnan Huang
DZDayong Zhang
Dayong Zhang
GYGuanghui Yu
Guanghui Yu

26 January 2022 in ACS Applied Nano Materials
Verified
Journal Article
Closed access
SWShuang Wang
Shuang Wang
JLJing Li
Jing Li
SHShike Hu
Shike Hu
HKHe Kang
He Kang
SZSunwen Zhao
Sunwen Zhao
GYGuanghui Yu
Guanghui Yu

28 June 2020 in Materials
Verified
Journal Article
Open access
PDF file
XHXinnan Huang
Xinnan Huang
YYYao Yao
Yao Yao
SPSongang Peng
Songang Peng
DZDayong Zhang
Dayong Zhang
JSJingyuan Shi
Jingyuan Shi
Zhi JinZhi Jin
Zhi Jin
The stability of the subthreshold swing (SS) is quite important for switch and memory applications in logic circuits. The SS in our MoS2 field effect transistor (FET) is enlarged when the gate voltage sweep range expands towards the negative direction. This is quite different from other reported MoS2 FETs whose SS is almost constant while varying gate voltage sweep range. This anomalous SS enlargement can be attributed to interface states at the MoS2–SiO2 interface. Moreover, a deviation of SS from its linear relationship with temperature is found. We relate this deviation to two main reasons, the energetic distribution of interface states and Fermi level shift originated from the thermal activation. Our study may be helpful for the future modification of the MoS2 FET that is applied in the low power consumption devices and circuits.

14 February 2014 in Small
Verified
Journal Article
Closed access
PDF file
DZDayong Zhang
Dayong Zhang
Zhi JinZhi Jin
Zhi Jin
JSJingyuan Shi
Jingyuan Shi
PMPeng Ma
Peng Ma
SPSongang Peng
Songang Peng
TYTianchun Ye
Tianchun Ye