In this paper, a novel ITO/Ag/ITO (IAI) multilayer UV photodetector was successfully prepared via RF magnetron sputtering technique to achieve the dual-benefit of improved photoresponse and outstanding visible blindness properties. The influence of the annealing process on the performance of the elaborated IAI UV photodetector was carried out. Moreover, the structural and photoelectrical properties of the sputtered tri-layered structures with and without annealing effects were also analyzed. It was found that the elaborated UV -photodetector provides near perfect UV absorbance of 96%. This achievement is attributed to the improved light trapping capability and tunable plasmonic resonance effects induced by the efficient optical coupling between free-space UV photons and Ag plasmons. It was also revealed that the heat treatment paves a new path toward preparing efficient visible-blind UV photodetectors, where the annealed sample demonstrated a superior rejection ratio of 225 as compared to that of the unannealed counterpart. Besides, electrical characterization underlined the ability of the annealed IAI UV photodetector at 500°C for offering exciting opportunities, where it exhibits a high responsivity of 3.8mA/W at self-powered condition. Therefore, by well optimizing both IAI multilayer geometry and annealing conditions, we were able to elaborate an ultrathin photodetector suitable for high-performance and flexible UV sensing applications.

In this paper, we assess the performance of a new label-free DNA nanosensor based on ballistic carbon nanotube field-effect transistor (CNTFET). The proposed label-free biosensor employs the mechanism of an ultrascaled CNTFET in conjunction with the dielectric and charge modulation concept to electronically detect the neutralized and charged DNA molecules. The proposed DNA nanosensor is endowed with a sensitive channel based on a zigzag carbon nanotube (Z-CNT). The investigation is based on a rigorous quantum simulation, which solves self-consistently the Schrödinger and Poisson equations within the non-equilibrium Green’s function (NEGF) formalism framework. The threshold voltage shift is considered as a biosensing metric. The simulation study includes the potential distribution, Z-CNT charge density, lateral electric-field, IDS-VGS transfer characteristics, subthreshold swing, current spectrum, and sensitivity. Moreover, a parametric analysis is performed to study the impact of ultrascaling issue on the sensitivity behavior. The obtained results empower the proposed nanobiosensor to be considered as a promising candidate for high-performance labelfree DNA sensing applications at the nanoscale domain, where the dimensions of bio-measurands are comparable to those of nanobiosensors.

Increased device degradation due to hot-carrier effects in nanoscale double-gate (DG) MOSFETs is investigated. We have studied the hot-carrier degradation effects on surface potential, threshold voltage and drain-induced barrier lowering (DIBL) of nanoscale DG MOSFETs. Exploiting this new device model, we have found that the degradation becomes worse when the channel length gets shorter and the minimum potential's position is affected by the hot-carrier induced localised interface charge density. DIBL effect is more pronounced in very short channel lengths (L less than 40 nm) in the presence of the hot-carrier effects. The results showed that the analytical model is in close agreement with the 2-D numerical simulation over a wide range of device parameters.