Building a useful photonic quantum computer requires robust techniques to synthesize optical states that can encode qubits. Gottesman-Kitaev-Preskill (GKP) states¹ offer one of the most attractive classes of such qubit encodings, as they enable the implementation of universal gate sets with straightforward, deterministic and room temperature-compatible Gaussian operations². Existing pioneering demonstrations generating optical GKP states³ and other complex non-Gaussian states^4-11 have relied on free-space optical components, hindering the scaling eventually required for a utility-scale system. Here we use an ultra-low-loss integrated photonic chip fabricated on a customized multilayer silicon nitride 300-mm wafer platform, coupled over fibre with high-efficiency photon number resolving detectors, to generate GKP qubit states. These states show critical mode-level features necessary for fault tolerance, including at least four resolvable peaks in both p and q quadratures, and a clear lattice structure of negative Wigner function regions, in this case a 3 × 3 grid. We also show that our GKP states show sufficient structure to indicate that the devices used to make them could, after further reduction in optical losses, yield states for the fault-tolerant regime. This experiment validates a key pillar of bosonic architectures for photonic quantum computing^2,12, paving the way for arrays of GKP sources that will supply future fault-tolerant machines.

For further uptake in the solar cell industry, n-ZnO/p-Si single heterojunction solar cell has attracted much attention of the research community in recent years. This paper reports the influence of bandgap and/or electron affinity tuning of zinc oxide on the performance of n-ZnO/p-Si single heterojunction photovoltaic cell using PC1D simulations. The simulation results reveal that the open circuit voltage and fill factor can be improved significantly by optimizing valence-band and conduction-band off-sets by engineering the bandgap and electron affinity of zinc oxide. An overall conversion efficiency of more than 20.3% can be achieved without additional cost or any change in device structure. It has been found that the improvement in efficiency is mainly due to reduction in conduction band offset that has a significant influence on minority carrier current.

We present a simple technique for simultaneous determination of thickness and refractive index of plane-parallel samples in the terahertz radiation domain. The technique uses time-of-flight measurements of the terahertz pulse. It has been employed on nine different polymers and semiconductor materials, which are transparent for terahertz frequencies. Our results of thickness measurement are in good agreement with micrometer reading. The accuracy in the determination of refractive index is on the order of two decimal points.

We present a comparison of different techniques for the analysis of the shift and tilt in optical interference fringes. Fringe center, Radon transform, and Gaussian approximation methods are used for fringe analysis. We have measured the tilt and shift between two relevant fringe patterns. The error in tilt measurement was about 2%, and the displacement of the order of few nanometers was measured by the fringe shift analysis. The comparison between the techniques is analyzed with respect to percentage error.