In this study, the performances of red CsPbI₃-based all-inorganic perovskite quantum-dot light-emitting diodes (IPQLEDs) employing polymeric crystalline Poly(3-hexylthiophene-2,5-diyl) (P3HT), poly(9-vinycarbazole) (PVK), Poly(N,N′-bis-4-butylphenyl-N,N′-bisphenyl)benzidine (Poly-TPD) and 9,9-Bis[4-[(4-ethenylphenyl)methoxy]phenyl]-N2,N7-di-1-naphthalenyl-N2,N7-diphenyl-9H-fluorene-2,7-diamine (VB-FNPD) as the hole transporting layers (HTLs) have been demonstrated. The purpose of this work is an attempt to promote the development of device structures and hole transporting materials for the CsPbI₃-based IPQLEDs via a comparative study of different HTLs. A full-coverage quantum dot (QD) film without the aggregation can be obtained by coating it with VB-FNPD, and thus, the best external quantum efficiency (EQE) of 7.28% was achieved in the VB-FNPD device. We also reported a standing method to further improve the degree of VB-FNPD polymerization, resulting in the improved device performance, with the EQE of 8.64%.

This study investigated Co₄₀Fe₄₀W₂₀ single-layer thin films according to their corresponding structure, grain size, contact angle, and surface energy characteristics. Co₄₀Fe₄₀W₂₀ alloy thin films of different thicknesses, ranging from 10 to 50 nm, were sputtered on Si(100) substrates by DC magnetron sputtering. The thin films were annealed under three conditions: as-deposited, 250 °C, and 350 °C temperatures, respectively. The Scherrer equation was applied to calculate the grain size of Co₄₀Fe₄₀W₂₀ thin films. The results show that the grain size of CoFe(110) increased simultaneously with the increase of post-annealing temperature, suggesting that the crystallinity of Co₄₀Fe₄₀W₂₀ thin films increased with the post-annealing temperature. Moreover, the contact angles of all Co₄₀Fe₄₀W₂₀ thin films were all less than 90°, suggesting that Co₄₀Fe₄₀W₂₀ thin films show changes in the direction of higher hydrophilicity. However, we found that their contact angles decreased as the grain size of CoFe increased. Finally, the Young equation was applied to calculate the surface energy of Co₄₀Fe₄₀W₂₀ thin films. After post-annealing, the surface energy of Co₄₀Fe₄₀W₂₀ thin films increased with the rising post-annealing temperature. This is the highest value of surface energy observed for 350 °C. In addition, the surface energy increased as the contact angle of Co₄₀Fe₄₀W₂₀ thin films decreased. The high surface energy means stronger adhesion, allowing the formation of multilayer thin films with magnetic tunneling junctions (MTJs). The sheet resistance of the as-deposited and thinner CoFeW films is larger than annealed and thicker CoFeW films. When the thickness is from 10 nm to 50 nm, the hardness and Young’s modulus of the CoFeW film also show a saturation trend.

Co₆₀Fe₂₀Sm₂₀ thin films were deposited onto glass substrates in a high vacuum setting. The films varied in thickness from 10 to 50 nm and underwent annealing processes at different temperatures: room temperature (RT), 100, 200, and 300 °C. Our analysis encompassed structural, magnetic, electrical, nanomechanical, adhesive, and optical properties in relation to film thickness and annealing temperature. X-ray diffraction (XRD) analysis did not reveal characteristic peaks in Co₆₀Fe₂₀Sm₂₀ thin films due to insufficient growth-driving forces. Electrical measurements indicated reduced resistivity and sheet resistance with increasing film thickness and higher annealing temperatures, owing to hindered current-carrier transport resulting from the amorphous structure. Atomic force microscope (AFM) analysis showed a decrease in surface roughness with increased thickness and annealing temperature. The low-frequency alternating current magnetic susceptibility (χ_ac) values increased with film thickness and annealing temperature. Nanoindentation analysis demonstrated reduced film hardness and Young’s modulus with thicker films. Contact angle measurements suggested a hydrophilic film. Surface energy increased with greater film thickness, particularly in annealed films, indicating a decrease in contact angle contributing to this increase. Transmittance measurements have revealed intensified absorption and reduced transmittance with thicker films. In summary, the surface roughness of CoFeSm films at different annealing temperatures significantly influenced their magnetic, electrical, adhesive, and optical properties. A smoother surface reduced the pinning effect on the domain walls, enhancing the χ_ac value. Additionally, diminished surface roughness led to a lower contact angle and higher surface energy. Additionally, smoother surfaces exhibited higher carrier conductivity, resulting in reduced electrical resistance. The optical transparency decreased due to the smoother surface of Co₆₀Fe₂₀Sm₂₀ films.

In this study, Co₄₀Fe₄₀B₁₀Dy₁₀ thin films were deposited using a direct current (DC) magnetron sputtering technique. The films were deposited on glass substrates with thicknesses of 10, 20, 30, 40, and 50 nm, and heat-treated in a vacuum annealing furnace at 100, 200, and 300 °C. Various instruments were used to examine and analyze the effects of roughness on the magnetic, adhesive, and mechanical properties. From the low frequency alternating current magnetic susceptibility (χ_ac) results, the optimum resonance frequency is 50 Hz, and the maximum χ_ac value tends to increase with the increase in the thicknesses and annealing temperatures. The maximum χ_ac value is 0.18 at a film thickness of 50 nm and an annealing temperature of 300 °C. From the four-point probe, it is found that the resistivity and sheet resistance values decrease with the increase in film deposition thicknesses and higher annealing temperatures. From the magnetic force microscopy (MFM), the stripe-like magnetic domain distribution is more obvious with the increase in annealing temperature. According to the contact angle data, at the same annealing temperature, the contact angle decreases as the thickness increases due to changes in surface morphology. The maximal surface energy value at 300 °C is 34.71 mJ/mm². The transmittance decreases with increasing film thickness, while the absorption intensity is inversely proportional to the transmittance, implying that the thickness effect suppresses the photon signal. Smoother roughness has less domain pinning, more carrier conductivity, and less light scattering, resulting in superior magnetic, electrical, adhesive, and optical performance.