A simple technique to determine MOSFET gate-bias dependent source and drain series resistances from experimental S-parameters is presented. This technique uses the measured data of a single device. The extracted data allow the accurate modelling of the bias dependence of the output resistance of the MOSFET up to 27 GHz.

A method to determine the characteristic impedance of transmission lines considering the substrate loss is presented. The extracted data shows that at microwave frequencies the finite loss tangent parameter impacts the characteristic impedance even in a low-loss substrate.

An S-parameter measurement-based procedure for the extraction of the bias dependent and bias independent components of the MOSFET series resistance is presented. The proposed procedure allows the direct and analytical determination of these components from measurements performed on a single device. The method is verified by achieving good agreement between simulated and experimental data for a 0.18-/spl mu/m channel-length MOSFET.

A method for achieving impedance matching between traces and multilayer via transitions in on-package chip-to-chip links is presented. The method allows determining of the geometry for minimizing the return loss when a signal propagates through the link. For this purpose, analytical equations are derived using a physically-based equivalent circuit to represent the input impedance of multilayer via transitions. S -parameter measurements performed to optimized links using the method demonstrate the usefulness of the proposal.