Roberto Stack Murphy Arteaga

Dr. Roberto Stack Murphy Arteaga

Instituto Nacional de Astrofisica, Optica y Electronica, Puebla, Mexico

Research Focus & Metrics

Academic Career Length

36Years (1991-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 February 2017 in Microelectronics Reliability
Verified
Journal Article
Closed access
AOAdelmo Ortiz-Conde
Adelmo Ortiz-Conde
ASAndrea Sucre-González
Andrea Sucre-González
FZFabián Zárate-Rincón
Fabián Zárate-Rincón
RTReydezel Torres-Torres
Reydezel Torres-Torres
RARoberto Stack Murphy Arteaga
Roberto Stack Murphy Arteaga
FGFRANCISCO JAVIER GARCIA-SANCHEZ
FRANCISCO JAVIER GARCIA-SANCHEZ

2 October 2003 in Electronics Letters
Verified
Journal Article
Closed access
RTReydezel Torres-Torres
Reydezel Torres-Torres
RARoberto Stack Murphy Arteaga
Roberto Stack Murphy Arteaga
SDS. Decoutere
S. Decoutere
A simple technique to determine MOSFET gate-bias dependent source and drain series resistances from experimental S-parameters is presented. This technique uses the measured data of a single device. The extracted data allow the accurate modelling of the bias dependence of the output resistance of the MOSFET up to 27 GHz.

29 May 2020 in IEEE Access
Verified
Journal Article
Open access
KNKAREN NALLELY OLAN NUÑEZ
KAREN NALLELY OLAN NUÑEZ
RARoberto Stack Murphy Arteaga
Roberto Stack Murphy Arteaga
ECEdgar Colín-Beltrán
Edgar Colín-Beltrán
In this paper we present the design and fabrication of a two-antenna array to resonate at 5.8 GHz, a frequency that satisfies a host of applications, especially those associated with the ISM band, but including IoT applications. The design incorporates several techniques to improve figures of merit and reduce its size. The array presents a measured bandwidth of 617 MHz (from 5.503 to 6.120 GHz, or 10.63% about the central frequency) when built on a thin substrate, and of 455 MHz (from 5.517 to 5.972 GHz; 7.84%) when fabricated using a thicker one. The simulated gains were of 6.89 dBi and 7.63 dBi, whereas the measured ones were 6.7 dBi and 7.2 dBi, respectively. Size reduction is better than 30% and the simulated efficiencies are higher than 90%.

1 January 2012 in Journal of Nanomaterials
Verified
Journal Article
Open access
PDF file
MAMARIANO ACEVES-MIJARES
MARIANO ACEVES-MIJARES
AGAlfredo Gonzalez-Fernandez
Alfredo Gonzalez-Fernandez
RLR. López-Estopier
R. López-Estopier
ALA. Luna-López
A. Luna-López
DBD. Berman-Mendoza
D. Berman-Mendoza
RARoberto Stack Murphy Arteaga
Roberto Stack Murphy Arteaga
Silicon Rich Oxide (SRO) has been considered as a material to overcome the drawbacks of silicon to achieve optical functions. Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD). In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°C are presented. The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals. The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850nm, has been observed. The results show that emission is a function of both silicon excess in the film and excitation energy. As a result different color emissions can be obtained by selecting the suitable excitation energy.

21 March 2016 in IEEE Transactions on Electron Devices
Verified
Journal Article
Closed access
ASAndrea Sucre-Gonzalez
Andrea Sucre-Gonzalez
FZFabian Zarate-Rincon
Fabian Zarate-Rincon
AOAdelmo Ortiz-Conde
Adelmo Ortiz-Conde
RTReydezel Torres-Torres
Reydezel Torres-Torres
FGFRANCISCO JAVIER GARCIA-SANCHEZ
FRANCISCO JAVIER GARCIA-SANCHEZ
RARoberto Stack Murphy Arteaga
Roberto Stack Murphy Arteaga
Extrinsic parasitic series resistance and mobility degradation are two important parameters limiting the performance of multifinger microwave MOSFETs. In this paper, we present a method to extract these parameters from measured drain-voltage versus gate-voltage characteristics at given constant values of drain current. Measured data of multifinger microwave MOSFETs are used to test and verify the developed method. The method requires only simple dc measurements on a single test device.

23 January 2003 in Electronics Letters
Verified
Journal Article
Closed access
RTReydezel Torres-Torres
Reydezel Torres-Torres
RARoberto Stack Murphy Arteaga
Roberto Stack Murphy Arteaga
SDS. Decoutere
S. Decoutere
A simple and reliable method to determine a MOSFET's gate resistance (Rg) directly from S-parameter measurements is presented. The extracted data agree well with the data predicted by transmission line theory and show that the main contribution of the transistor's input resistance (Rin) comes from the gate electrode resistance for devices with channel length below 0.2 µm.