Stanislav Cichon

Dr. Stanislav Cichon

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Research Focus & Metrics

Academic Career Length

15Years (2012-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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14 February 2020 in Graphene Technology
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Journal Article
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PMPetr Machac
Petr Machac
SCStanislav Cichon
Stanislav Cichon
LLLadislav Lapcak
Ladislav Lapcak
LFLadislav Fekete
Ladislav Fekete

1 June 2012 in Thin Solid Films
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Journal Article
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PMP. Macháč
P. Macháč
TFT. Fidler
T. Fidler
SCStanislav Cichon
Stanislav Cichon
LML. Mišková
L. Mišková

19 August 2022 in The Journal of Physical Chemistry C
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Journal Article
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SCStanislav Cichon
Stanislav Cichon
VDVáclav Drchal
Václav Drchal
KHKateřina Horáková
Kateřina Horáková
VCVladimír Cháb
Vladimír Cháb
Irena KratochvilovaIrena Kratochvilova
Irena Kratochvilova
JLJán Lančok
Ján Lančok

1 July 2020 in APL Materials
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Journal Article
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MTMarina Tyunina
Marina Tyunina
OVO. Vetokhina
O. Vetokhina
NNNatalia Nepomniashchaia
Natalia Nepomniashchaia
OPO. Pacherova
O. Pacherova
SCStanislav Cichon
Stanislav Cichon
Alexandr DejnekaAlexandr Dejneka
Alexandr Dejneka
Multiple strong impacts of anion doping Λ (Λ = oxygen vacancy, nitrogen, or hydrogen) on the optical properties in the near-infrared to vacuum ultraviolet spectral range are experimentally revealed in cube-on-cube-type epitaxial perovskite BaTiO3−δΛδ films (δ ≤ 0.01) grown on (001)SrTiO3 substrates. Compared to the reference undoped films and bulk crystal, the anion-doped films exhibit massive changes of the index of refraction in the transparency range Δn of ∼0.1 to 0.2, a profound bandgap widening ΔEg of ∼0.3 eV to 0.4 eV, a dopant-specific near-edge absorption, and doping-induced interband transitions. Both the conduction-band uplift and the changes in the index of refraction are ascribed to the internal stress and electric field, which result from epitaxially controlled dopant locations in the [Ba–O](001) planes. The dopant-induced in-gap states are responsible for the near-edge absorption, whereas the dopant-induced conduction-band states are suggested to modify the interband transitions and the intrinsic elasto- and electro-optic coefficients.

28 September 2023 in Physical Review B
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JZJan Zich
Jan Zich
MMMartin Míšek
Martin Míšek
Vaclav HolyVaclav Holy
Vaclav Holy
KCKarel Carva
Karel Carva
JCJan CIZEK
Jan CIZEK
ČDČestmír Drašar
Čestmír Drašar
In this paper, we report the physical properties of FexBi2Se3 single crystals. Fe-intercalated Bi2Se3 exhibits superconductivity, pronounced Shubnikov–de Haas oscillations, high carrier mobility, and features of two-dimensional (2D) transport in the sample volume for x as low as 0.02. The superconductivity of the samples is limited to the range x=0.02–0.04. We correlate all the transport properties with structural properties, namely, with mosaic structure of single crystals and point defects. This correlation in the context of the rich literature data allows us to build an intricate physical picture addressing the unique properties of the material under study within the framework of the Bi2Se3 quasi-2D defect structure model. The ultimate aim of this paper is to show that many interesting properties of Bi2Se3 may be associated with inhomogeneous distribution of defects in the volume of the sample, which largely replicates the mosaicity of single crystals.

24 December 2024 in Applied Surface Science Advances
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Journal Article
Open access
Joris More-ChevalierJoris More-Chevalier
Joris More-Chevalier
UWU.D. Wdowik
U.D. Wdowik
JMJiří Martan
Jiří Martan
TBT. Baba
T. Baba
SCStanislav Cichon
Stanislav Cichon
Jan LancokJan Lancok
Jan Lancok