Conducting polymer thin films containing inherent structural disorder exhibit complicated electronic, transport, and thermoelectric properties. The unconventional power-law relation between the Seebeck coefficient (S) and the electrical conductivity (σ) is one of the typical consequences of this disorder, where no maximum of the thermoelectric power factor (P = S2σ) has been observed upon doping, unlike conventional systems. Here, it is demonstrated that a thiophene-based semicrystalline polymer exhibits a clear maximum of P through wide-range carrier doping by the electrolyte gating technique. The maximum value appears around the macroscopic insulator-to-metal transition upon doping, which is firmly confirmed by the temperature dependence of σ and magnetoresistance measurements. The effect of disorder on charge transport is suppressed in the metallic state, resulting in the conventional S-σ relation described by the Mott equation. The present results provide a physical background for controlling the performance of conducting polymers toward the application to thermoelectric devices.
3 March 2021 in Journal of the American Chemical Society
Charge transport and thermoelectric conversion mechanisms in doped semicrystalline polymer films are key issues in the field of wearable electronics, whereas the complex film structure consisting of crystalline domains and non-crystalline boundaries prevents sufficient understanding of them. In this study, we fully clarify the roles of the domains and the boundaries in a typical semicrystalline polymer on macroscopic charge transport under continuous electrochemical doping. In the crystalline domains, a multi-step transformation of the transport properties from effectively metallic behavior to weak localization (WL) to variable-range hopping (VRH) is found with decreasing temperature and doping level. On the other hand, at the domain boundaries, the effectively metallic conduction changes directly to VRH. Based on these results, the extremely complicated phase diagram, including the coexistence of the WL and VRH processes, is well explained. The proposed transport mechanism further explains the thermoelectric properties of the film.