This article presents a high-sensitivity, quantified, linear, and mediator-free resonator-based microwave biosensor for glucose sensing application. The proposed biosensor comprises an air-bridge-type asymmetrical differential inductor (L) and a center-loaded circular finger-based inter-digital capacitor (C) fabricated on Gallium Arsenide (GaAs) substrate using advanced micro-fabrication technology. The intertwined asymmetrical differential inductor is used to achieve a high inductance value with a suitable Q-factor, and the centralized inter-digital capacitor is introduced to generate an intensified electric field. The designed microwave sensor is optimized to operate at a low resonating frequency that increases the electric field penetration depth and interaction area in the glucose sample. The microwave biosensor is tested with different glucose concentrations (0.3–5 mg/ml), under different ambient temperatures (10–50 °C). The involvement of advanced micro-fabrication technology effectively miniaturized the microwave biosensor (0.006λ₀ × 0.005λ₀) and enhanced its filling factor. The proposed microwave biosensor demonstrates a high sensitivity of 117.5 MHz/mgmL^-1 with a linear response (r² = 0.9987), good amplitude variation of 0.49 dB/mgmL^-1 with a linear response (r² = 0.9954), and maximum reproducibility of 0.78% at 2 mg/mL. Additionally, mathematical modelling was performed to estimate the dielectric value of the frequency-dependent glucose sample. The measured and analyzed results indicate that the proposed biosensor is suitable for real-time blood glucose detection measurements.

Nanophotonic engineering of light–matter interaction at subwavelength scale allows thermal radiation that is fundamentally different from that of traditional thermal emitters and provides exciting opportunities for various thermal‐photonic applications. We propose a new kind of integrated and electrically controlled thermal emitter that exploits layered metamaterials with lithography‐free and dielectric/metallic nanolayers. We demonstrate both theoretically and experimentally that the proposed concept can create a strong photonic bandgap in the visible regime and allow small impedance mismatch at the infrared wavelengths, which gives rise to optical features of significantly enhanced emissivity at the broad infrared wavelengths of 1.4–14 μm as well as effectively suppressed emissivity in the visible region. The electrically driven metamaterial devices are optically and thermally stable at temperatures up to ∼800 K with electro‐optical conversion efficiency reaching ∼30%. We believe that the proposed high‐efficiency thermal emitters will pave the way toward integrated infrared light source platforms for various thermal‐photonic applications and particularly provide a novel alternative for cost‐effective, compact, low glare, and energy‐efficient infrared heating.

Gas sensing performance characterization systems are essential for the research and development of gas sensing materials and devices. Although existing systems are almost completely automatically operated, the accuracies of gas concentration control and of pressure control and the ability to simultaneously detect different sensor signals still require improvement. In this study, a high-precision gas sensing material characterization system is developed based on vacuum technology, with the objective of enabling the precise and simultaneous measurement of electrical responses. Because of the implementation of vacuum technology, the gas concentration control accuracy is improved more than 1600 times, whereas the pressure of the test ambient condition can be precisely adjusted between vacuum and 1.2 bar. The vacuum-assisted gas-exchanging mechanism also enables the sensor response time to be determined more accurately. The system is capable of performing sensitivity, selectivity, and stability tests and can control the ambient relative humidity in a precise manner. More importantly, the levels of performance of three different optical signal measurement set-ups were investigated and compared in terms of detection range, linearity, noise, and response time, based on which of their scopes of application were proposed. Finally, single-period and cyclical tests were performed to examine the ability of the system to detect optical and electrical responses simultaneously, both at a single wavelength and in a spectral region.

The development of hydrogen energy is advancing rapidly, while the progress of hydrogen sensors has been relatively lagging behind and cannot meet the stringent performance requirements of hydrogen energy applications. WO3 has attracted significant attention due to its highly complementary optical and electrical responses to hydrogen. In this study, hydrogen-sensitive WO3 thin films characterized by vertically aligned crystallites were fabricated by modulating the substrate temperature and oxygen pressure during pulsed laser deposition. Building upon this foundation, a comprehensive investigation into surface modification strategies for enhancing sensitivity was undertaken. The surface modifications encompassed eight distinct metals and four different metal oxides. Among the metal-modified samples, palladium (Pd) Pd exhibited a markedly enhanced electrical response, defined as the ratio of the resistance in hydrogen-free air to that in hydrogen, of 1022, corresponding to ~45 times higher than the value of 22.4 achieved for Pt-modified films and 120 times higher than the value of 8.4 for Au-modified films. In addition, Pd/WO3 films showed a measurable optical transmittance change of 9.7%, while all other metal-modified samples exhibited negligible optical responses (<1%). This enhancement is attributable to the catalytic and electronic sensitisation effects of Pd. Conversely, metals such as platinum (Pt), gold (Au), and silver (Ag) elicited negligible optical responses, suggesting minimal catalytic activity. The electrical response in these cases was primarily governed by electronic sensitization effects related to the work function of the metal, with higher work function values correlating with more pronounced sensitization. Regarding metal oxide modifications, the sensitization effect was more substantial when the disparity in work function between the oxide and WO3 was greater, and this enhancement was found to be independent of the charge carrier type of the modifying oxide. These results offer significant insights into the design principles underlying high-performance WO3-based hydrogen sensors and underscore the pivotal influence of surface modification in governing their sensing characteristics.

Two-dimensional electron gas (2DEG) at the (100) KTaO₃(KTO) surface and interfaces has attracted extensive interest because of its abundant physical properties. Here, light illumination-induced semiconductor–metal transition in the 2DEG at the KTO surface was investigated. 2DEG was formed at the surface of KTO by argon ion bombardment. The 2DEG prepared with a shorter bombardment time (300 s) exhibits semiconducting behavior in the range of 20~300 K in the dark. However, it shows a different resistance behavior, namely, a metallic state above ~55 K and a semiconducting state below ~55 K when exposed to visible light (405 nm) with a giant conductivity increase of about eight orders of magnitude at 20 K. The suppression of the semiconducting behavior is found to be more pronounced with increasing light power. After removing the illumination, the resistance cannot recover quickly, exhibiting persistent photoconductivity. More interestingly, the photoresponse of the 2DEG below 50 K was almost independent of the laser wavelength, although the photon energy is lower than the band gap of KTO. The present results provide experimental support for tuning oxide 2DEG by photoexcitation, suggesting promising applications of KTO-based 2DEG in future electronic and optoelectronic devices.