Laser-based wireless power transfer (LWPT) technology has attracted more and more attention in the field of long-range wireless power transfer (WPT). In practical applications, the light intensity distribution of the laser beam at the receiving end has a crucial impact on the efficiency of the power transfer system. In this article, the optimization of photovoltaic (PV) array configuration is explored in an atmospheric turbulent environment under the irradiation of Gaussian (GS) and flat-top (FT) laser beams. By comparing the photoelectric conversion efficiency of 3×3 PV arrays under the irradiation of GS beams and three different orders of FT beams, we conducted a comprehensive investigation on the impact of GS beam and FT beams as light sources on the performance output of PV arrays. We develop a model of atmospheric turbulence and analyze its effects on laser power transmission. Further numerical simulation was performed to evaluate the photoelectric conversion efficiency of the two laser beams when irradiated by the PV array after experiencing atmospheric turbulence. The results indicate that the FT beam exhibits superior characteristics compared to the GS beam in most cases. FT beams with orders 2, 5, and 10 exhibit an over 8% increase in power compared to a GS beam upon direct irradiation. After passing through weak turbulence for a distance of 2 km, the power enhancement exceeds 9% for all three FT beams. These findings highlight the potential advantages of FT beams in LWPT and offer new insights into the design and optimization of long-range WPT systems.

This article systematically studies the AlGaN/GaN MIS-HEMTs using the O ₂ plasma alternately treated Al ₂ O ₃ as gate dielectric. The X-ray photoelectron spectroscopy (XPS) analyses and capacitance-voltage (C-V) measurement results show that the density of the border traps originating from the Al-OH bonds in the ALD-Al ₂ O ₃ gate dielectric can be significantly reduced after the O ₂ plasma alternating treatment. Consequently, a low gate leakage current and a high field-effect mobility of 1680cm ² /V·s are achieved. The results also demonstrate that the fabricated AlGaN/GaN MIS-HEMTs with the O ₂ plasma alternating treatment exhibit improved performances, having a high ON/OFF ratio of ~1011, a steep subthreshold slope of 74 mV/dec, a small hysteresis (Δ V _TH ) of 0.1 V and small ON-resistance ( R _ON ) of 6.0 Ω·mm. The device thermal stability was also improved within the tested temperature range. In addition, the pulsed I _D - V _DS measurements with quiescent drain bias ( V _DS0 ) stress of 40 V present negligible current collapse (2%) and low degradation of dynamic R _ON by 1.04 times the static R _ON .