Temperature sensors have been widely applied in daily life and production, but little attention has been paid to the research on temperature sensors based on surface plasmon resonance (SPR) sensors. Therefore, an SPR temperature sensor with a triple structure of titanium dioxide (TiO₂) film, gold (Au) film, and TiO₂ nanorods is proposed in this article. By optimizing the thickness and structure of TiO₂ film and nanorods and Au film, it is found that the sensitivity of the SPR temperature sensor can achieve 6038.53 nm/RIU and the detection temperature sensitivity is −2.40 nm/°C. According to the results, the sensitivity of the optimized sensor is 77.81% higher than that of the sensor with pure Au film, which is attributed to the TiO₂(film)-Au-TiO₂(nanorods) structure. Moreover, there is a good linear correlation (greater than 0.99) between temperature and resonance wavelength in the range from 0 °C to 60 °C, which can ensure the detection resolution. The high sensitivity, FOM, and detection resolution indicate that the proposed SPR sensor has a promising application in temperature monitoring.

Alcohol detection plays a key role in food processing and monitoring. Therefore, we present a fast, high reproducibility and label-free characteristics alcohol photochemical sensor based on the surface plasmon resonance (SPR) effect. By growing ZnO nanoflowers on Au film, the SPR signal red-shifted in the visible region as the alcohol concentration increased. More interestingly, the sensitivity improved to 127 nm/%, which is attributed to the ZnO nanoflowers/Au structure. The goodness of the linear fit was more than 0.99 at a range from 0 vol% to 95 vol% which ensures detection resolution. Finally, a practical application for distinguishing five kinds of alcoholic drinks has been demonstrated. The excellent sensing characteristics also indicate the potential of the device for applications in the direction of food processing and monitoring, and the simple structure fabrication and economic environmental protection make it more attractive.

The leakage behavior of ferroelectric film has an important effect on energy storage characteristics. Understanding and controlling the leakage mechanism of ferroelectric film at different temperatures can effectively improve its wide-temperature storage performance. Here, the structures of a 1 mol% SiO₂-doped BaZr_0.35Ti_0.65O₃ (BZTS) layer sandwiched between two undoped BaZr_0.35Ti_0.65O₃ (BZT35) layers was demonstrated, and the leakage mechanism was analyzed compared with BZT35 and BZTS single-layer film. It was found that interface-limited conduction of Schottky (S) emission and the Fowler-Nordheim (F-N) tunneling existing in BZT35 and BZTS films under high temperature and a high electric field are the main source of the increase of leakage current and the decrease of energy storage efficiency at high temperature. Only an ohmic conductive mechanism exists in the whole temperature range of BZT35/BZTS/BZT35(1:1:1) sandwich structure films, indicating that sandwich multilayer films can effectively simulate the occurrence of interface-limited conductive mechanisms and mention the energy storage characteristics under high temperature.

A graphene passively Q-switched Nd:YAG laser experienced resonant pumping by an 885 nm laser diode (LD), as demonstrated in this paper. In the continuous-wave operation, the maximum average output power was up to 1.8 W with the absorbed pump power being 11.7 W, and the slope efficiency was 51.2%. In the Q-switching operation, the maximum average output power was up to 639 mW with a pulse width of 2.06 μs at the repetition frequency of 102.7 kHz, while the slope efficiency and the beam quality factor M² were 25.3% and 1.25, respectively.

The modeling of compliant bridge-type displacement amplification mechanisms has challenges due to the intrinsic coupling of kinematic and mechanical behaviors. A structure load performance integrated model method for the bridge-type displacement amplification mechanism is presented. The established modeling based on Castigliano’s second theorem considers the deformations of all members, the effect of external load and the nonlinear shear effect. Compared to the finite element model (FEM) and existing models, the established modeling precisely predicts significant nonlinearity of the displacement amplification ratio (DAR) with the driving force, strong sensitivity of DAR to the external load and corresponding relationships of structural parameters with DAR, which is the closest to the FEM result over existing models. The variance-based sensitivities of structural parameters to DAR are thoroughly analyzed, indicating that sensitive structure parameters need to be focused on. Modeling applications further prove the reliability and expandability of the proposed model method. The proposed model method can provide support for the design, optimization and control of compliant systems with bridge-type displacement amplification mechanisms.

Laser annealing plays a significant role in the fabrication of scaled-down semiconductor devices by activating dopant ions and rearranging silicon atoms in ion-implanted silicon wafers, thereby improving material properties. Precise temperature control is crucial in wafer annealing, particularly for repeated processes where repeatability affects uniformity. In this study, we employ a three-dimensional time-dependent thermal simulation model to numerically analyze the multiple static laser annealing processes based on a CO₂ laser with a center wavelength of 9.3 μm and a pulse repetition rate of 10 kHz. The heat transfer equation is solved using a multiphysics coupling approach to accurately simulate the effects of different numbers of CO₂ laser pulses on wafer temperature rise and repeatability. Additionally, a pyrometer is used to collect and convert the surface temperature of the wafer. Radiation intensity is converted to temperature via Planck’s law for real-time monitoring. Post-processing is performed to fit the measured temperature and the actual temperature into a linear relationship, aiding in obtaining the actual temperature under small beam spots. According to the simulation conditions, a wafer annealing device using a CO₂ laser as the light source was independently built for verification, and a stable and uniform annealing effect was realized.