Alcohol detection plays a key role in food processing and monitoring. Therefore, we present a fast, high reproducibility and label-free characteristics alcohol photochemical sensor based on the surface plasmon resonance (SPR) effect. By growing ZnO nanoflowers on Au film, the SPR signal red-shifted in the visible region as the alcohol concentration increased. More interestingly, the sensitivity improved to 127 nm/%, which is attributed to the ZnO nanoflowers/Au structure. The goodness of the linear fit was more than 0.99 at a range from 0 vol% to 95 vol% which ensures detection resolution. Finally, a practical application for distinguishing five kinds of alcoholic drinks has been demonstrated. The excellent sensing characteristics also indicate the potential of the device for applications in the direction of food processing and monitoring, and the simple structure fabrication and economic environmental protection make it more attractive.

Stimulated Brillouin scattering (SBS) lasers based on silicon waveguides with large SBS gain have been widely used in frequency tunable laser emissions, mode-locked pulse lasers, low-noise oscillators, optical gyroscopes and other fields. However, among SBS lasers, the realization of Brillouin laser output often requires a longer waveguide length, which not only increases waveguide loss but also increase the size of the device. As a new medium, lithium niobate has been fabricated into a new type of hybrid structure. Meanwhile, the width of a suspended waveguide is adjusted to tune the phonon frequency of an SBS laser based on lithium niobate substrate. Simulation results show that the tunable forward SBS effect is realized in a lithium niobate-suspended optical waveguide, showing a larger forward stimulated Brillouin scattering gain of 0.31 W⁻¹m⁻¹. The tunable phonon frequency ranges from 1 to 15 GHz. Therefore, utilizing the photon–phonon conversion effect, the waveguide system with LiNbO₃ will pave a new way forward with better integration.

In this study, the CsPbBrI₂ perovskite film was prepared by the preparation of the sol-gel and the spin-coating method, and the cubic lattice was stabilized by introducing Br⁺ into the CsPbI₃ film, which solved the problem of instability of the traditional perovskite phase. Based on the CsPbBrI₂ perovskite film, the Ag/CsPbBrI₂/ITO memory device with a resistance switching effect was prepared. The morphology and phase compositions of the film were analyzed by scanning electron microscope and X-ray diffraction. The non-volatile and repeatable resistance switching effect of the Ag/CsPbBrI₂/ITO memory device was measured under open-air conditions. The experimental results show that the surface of the CsPbBrI₂ perovskite film is uniform and dense, and the Ag/CsPbBrI₂/ITO memory device has an order of magnitude resistance-on-off ratio after 500 cycles of cyclic voltage. This study shows that Ag/CsPbBrI₂/ITO memory devices based on CsPbBrI₂ perovskite films have potential applications in the field of non-volatile memory devices. At the same time, the transient properties of the CsPbBrI₂ film that can quickly dissolve in deionized water make it potentially useful in short-period data storage units and implantable electronic devices with human or environmental sensors.

Ho: GdVO₄ crystal is the host material for the production of laser working in the middle infrared range. In this contribution, the characteristic parameters of the Ho: GdVO₄ crystal were measured, and the material was used as a gain medium to build a diode-pumped laser for the first time, to reach a laser output at 2047.9 nm. The output beam quality factor M² was measured to be 1.4 and 1.3 in x-direction and y-direction, respectively. In addition, the influence of the transmittance of the output mirror on the generation of laser was obtained through exploration. The results showed that the laser wavelength blue-shifted as the output transmittance increased.

The leakage behavior of ferroelectric film has an important effect on energy storage characteristics. Understanding and controlling the leakage mechanism of ferroelectric film at different temperatures can effectively improve its wide-temperature storage performance. Here, the structures of a 1 mol% SiO₂-doped BaZr_0.35Ti_0.65O₃ (BZTS) layer sandwiched between two undoped BaZr_0.35Ti_0.65O₃ (BZT35) layers was demonstrated, and the leakage mechanism was analyzed compared with BZT35 and BZTS single-layer film. It was found that interface-limited conduction of Schottky (S) emission and the Fowler-Nordheim (F-N) tunneling existing in BZT35 and BZTS films under high temperature and a high electric field are the main source of the increase of leakage current and the decrease of energy storage efficiency at high temperature. Only an ohmic conductive mechanism exists in the whole temperature range of BZT35/BZTS/BZT35(1:1:1) sandwich structure films, indicating that sandwich multilayer films can effectively simulate the occurrence of interface-limited conductive mechanisms and mention the energy storage characteristics under high temperature.

In this study, an Er:YAG laser pumped intra-cavity Tm:YAG-Ho:GdVO₄ laser was built and debuted at room temperature. At an incident pump power of 9.2 W, this laser obtained a maximum output power of 1.6 W with a slope efficiency of 28.0%. Additionally, the M² factors at the maximum output power were measured to be 1.06 and 1.03 in the x and y directions, respectively. The results showed that the intra-cavity pumping method of combining thulium and holmium crystals as the gain medium was an effective way to obtain a 2 μm laser with near diffraction limited beam quality.