A way to obtain graphene-based materials on a large-scale level is by means of chemical methods for the oxidation of graphite to obtain graphene oxide (GO), in combination with thermal, laser, chemical and electrochemical reduction methods to produce reduced graphene oxide (rGO). Among these methods, thermal and laser-based reduction processes are attractive, due to their fast and low-cost characteristics. In this study, first a modified Hummer’s method was applied to obtain graphite oxide (GrO)/graphene oxide. Subsequently, an electrical furnace, a fusion instrument, a tubular reactor, a heating plate, and a microwave oven were used for the thermal reduction, and UV and CO₂ lasers were used for the photothermal and/or photochemical reduction. The chemical and structural characterizations of the fabricated rGO samples were performed by Brunauer–Emmett–Teller (BET), X-ray diffraction (XRD), scanning electron microscope (SEM) and Raman spectroscopy measurements. The analysis and comparison of the results revealed that the strongest feature of the thermal reduction methods is the production of high specific surface area, fundamental for volumetric energy applications such as hydrogen storage, whereas in the case of the laser reduction methods, a highly localized reduction is achieved, ideal for microsupercapacitors in flexible electronics.

In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al₂O₃ (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10⁻² Ω cm⁻¹ was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.

Indium tin oxide (ITO) is a commonly used material for transparent conductive electrodes (TCE) in optoelectronic applications. On the other hand, graphene has superior electrical conductivity and exceptional mechanical flexibility, which makes it a promising candidate as a TCE material. This work proposes a CVD graphene/ITO hybrid electrode enhanced by doping with silver nanowires (Ag-NWs). The study aims to improve the performance of the electrode by optimizing two key parameters during the fabrication process: the thermal annealing time after the transfer of graphene on ITO and the Ag-NWs doping conditions. The annealing treatment is fundamental to reducing the residues on the surface of graphene and increasing the interface contact between graphene and ITO. The correct coverage and distribution of the dopant on graphene is obtained by controlling the concentration of the Ag-NWs and the spin coating speeds. The results indicate a substantial improvement in the optical and electrical performance of the Ag-NWs/graphene/ITO hybrid electrode. A remarkably low sheet resistance of 42.4 Ω/sq (±2 Ω/sq) has been achieved while maintaining a high optical transmittance of 87.3% (±0.5%).

The state of Zacatecas (Mexico) is one of the places most affected by pollution from the mining industry. A total of 21 samples from two areas were collected (6 samples from zone A and 15 samples from zone B) to evaluate the level of radioactivity and the degree of contamination with heavy metals. The activity concentration for ²³⁸U and ²³²Th was within typical values but that of ²²⁶Ra exceeded the value of 60 Bq kg⁻¹ in both areas. In some places, the concentration of ⁴⁰K was higher than the world average according to UNSCEAR. The radium equivalent activity Ra_eq and outdoor gamma exposure dose (D) indicated that some sites presented a radiological risk for the population. The excess lifetime cancer risk (ELCR) presented a higher risk than the world average in both sampled areas. Other parameters, such as the radiation index R_i, the external risk index H_ex, and the internal risk index H_in, also indicated that there was a greater risk due to radiation exposure in these areas. In the case of heavy metals, some parameters, such as the EF, the I_geo, and the CF, showed that some places in zone A and zone B were contaminated with As and Pb. However, the concentration of selenium obtained by ICP-MS in the sampled soil was higher than the average in the Earth’s crust, both in mine waste dumps and in unaltered soil, which indicated that the background concentration for selenium in these places is higher than the world average.

Many of the graphene-based structures exhibit an adsorption capacity due to their high specific surface area (SSA) and micropore volume. This capacity makes them competent materials for applications in energy and environmental sectors where efficiency is highly dependent on these properties for applications, such as water decontamination, solar cells or energy storage. The aim of this work is to study graphene-related materials (GRM) for applications where a high SSA is a requirement, considering the ideal SSA of graphene ≅ 2600 m²g⁻¹. For the synthesis of most of the GRMs, some oxidation method such as the Tour method is used to oxidize graphite to graphite oxide (GrO) as an initial step. Our work studies the optimization of this initial step to evaluate the best conditions to obtain GrO with the maximum possible SSA. The different parameters influencing the process have been evaluated and optimized by applying an experimental design (ED). The resulting materials have been characterized by Brunauer–Emmett–Teller (BET), elemental analysis (EA), X-ray diffraction (XRD) and Raman and scanning electron microscopy (SEM). The evaluation of the results shows a maximum SSA of GrO of 67.04 m²g⁻¹ for a temperature of 60 °C, a time of 12 h, a H₂O₂ volume of 50 mL and 4 g of KMnO₄.

Non-hydrogenated amorphous-silicon films were deposited on glass substrates by Radio Frequency magnetron sputtering with the aim of being used as precursor of a low-cost absorber to replace the conventional silicon absorber in solar cells. Two Serie of samples were deposited varying the substrate temperature and the working gas pressure, ranged from 0.7 to 4.5 Pa. The first Serie was deposited at room temperature, and the second one, at 325 °C. Relatively high deposition rates above 10 Å/s were reached by varying both deposition temperature and working Argon gas pressure to ensure high manufacturing rates. After deposition, the precursor films were treated with a continuous-wave diode laser to achieve a crystallized material considered as the alternative light absorber. Firstly, the structural and optical properties of non-hydrogenated amorphous silicon precursor films were investigated by Raman spectroscopy, atomic force microscopy, X-ray diffraction, reflectance, and transmittance, respectively. Structural changes were observed in the as-deposited films at room temperature, suggesting an orderly structure within an amorphous silicon matrix; meanwhile, the films deposited at higher temperature pointed out an amorphous structure. Lastly, the effect of the precursor material’s deposition conditions, and the laser parameters used in the crystallization process on the quality and properties of the subsequent crystallized material was evaluated. The results showed a strong influence of deposition conditions used in the amorphous silicon precursor.