New architectures of transparent conductive electrodes (TCEs) incorporating graphene monolayers in different configurations have been explored with the aim to improve the performance of silicon-heterojunction (SHJ) cell front transparent contacts. In SHJ technology, front electrodes play an important additional role as anti-reflectance (AR) coatings. In this work, different transparent-conductive-oxide (TCO) thin films have been combined with graphene monolayers in different configurations, yielding advanced transparent electrodes specifically designed to minimize surface reflection over a wide range of wavelengths and angles of incidence and to improve electrical performance. A preliminary analysis reveals a strong dependence of the optoelectronic properties of the TCEs on (i) the order in which the different thin films are deposited or the graphene is transferred and (ii) the specific TCO material used. The results shows a clear electrical improvement when three graphene monolayers are placed on top on 80-nm-thick ITO thin film. This optimum TCE presents sheet resistances as low as 55 Ω/sq and an average conductance as high as 13.12 mS. In addition, the spectral reflectance of this TCE also shows an important reduction in its weighted reflectance value of 2–3%. Hence, the work undergone so far clearly suggests the possibility to noticeably improve transparent electrodes with this approach and therefore to further enhance silicon-heterojunction cell performance. These results achieved so far clearly open the possibility to noticeably improve TCEs and therefore to further enhance SHJ contact-technology performance.

Hybrid transparent contacts based on combinations of a transparent conductive oxide and a few graphene monolayers were developed in order to evaluate their optical and electrical performance with the main aim to use them as front contacts in optoelectronic devices. The assessment of the most suitable strategies for their fabrication was performed by testing different protocols addressing such issues as the protection of the device structure underneath, the limitation of sample temperature during the graphene-monolayer transfer process and the determination of the most suitable stacking structure. Suitable metal ohmic electrodes were also evaluated. Among a number of options tested, the metal contact based on Ti + Ag showed the highest reproducibility and the lowest contact resistivity. Finally, with the objective of extracting the current generated from optoelectronic devices to the output pins of an external package, focusing on a near future commercial application, the electrical properties of the connections made with an ultrasonic bonding machine (sonic welding) between the optimized Ti + Ag metal contacts and Al or Au micro-wires were also evaluated. All these results have an enormous potential as hybrid electrodes based on graphene to be used in novel designs of a future generation of optoelectronic devices, such as solar cells.

Transparent conductive electrodes based on graphene have been previously proposed as an attractive candidate for optoelectronic devices. While graphene alone lacks the antireflectance properties needed in many applications, it can still be coupled with traditional transparent conductive oxides, further enhancing their electrical performance. In this work, the effect of combining indium tin oxide with between one and three graphene monolayers as the top electrode in silicon heterojunction solar cells is analyzed. Prior to the metal grid deposition, the electrical conductance of the hybrid electrodes was evaluated through reflection-mode terahertz time-domain spectroscopy. The obtained conductance maps showed a clear electrical improvement with each additional graphene sheet. In the electrical characterization of the finished solar cells, this translated to a meaningful reduction in the series resistance and an increase in the devices’ fill factor. On the other hand, each additional sheet absorbs part of the incoming radiation, causing the short circuit current to simultaneously decrease. Consequently, additional graphene monolayers past the first one did not further enhance the efficiency of the reference cells. Ultimately, the increase obtained in the fill factor endorses graphene-based hybrid electrodes as a potential concept for improving solar cells’ efficiency in future novel designs.

This work presents the implementation of ultrathin TiO₂ films, deposited at room temperature by radio-frequency magnetron sputtering, as electron-selective contacts in silicon heterojunction solar cells. The effect of the working pressure on the properties of the TiO₂ layers and its subsequent impact on the main parameters of the device are studied. The material characterization revealed an amorphous structure regardless of the working pressure; a rougher surface; and a blue shift in bandgap in the TiO₂ layer deposited at the highest-pressure value of 0.89 Pa. When incorporated as part of the passivated full-area electron contact in silicon heterojunction solar cell, the chemical passivation provided by the intrinsic a-Si:H rapidly deteriorates upon the sputtering of the ultra-thin TiO₂ films, although a short anneal is shown to restore much of the passivation lost. The deposition pressure and film thicknesses proved to be critical for the efficiency of the devices. The film thicknesses below 2 nm are necessary to reach open-circuit values above 660 mV, regardless of the deposition pressure. More so, the fill-factor showed a strong dependence on deposition pressure, with the best values obtained for the highest deposition pressure, which we correlated to the porosity of the films. Overall, these results show the potential to fabricate silicon solar cells with a simple implementation of electron-selective TiO₂ contact deposited by magnetron sputtering. These results show the potential to fabricate silicon solar cells with a simple implementation of electron-selective TiO₂ contact.

Non-hydrogenated amorphous-silicon films were deposited on glass substrates by Radio Frequency magnetron sputtering with the aim of being used as precursor of a low-cost absorber to replace the conventional silicon absorber in solar cells. Two Serie of samples were deposited varying the substrate temperature and the working gas pressure, ranged from 0.7 to 4.5 Pa. The first Serie was deposited at room temperature, and the second one, at 325 °C. Relatively high deposition rates above 10 Å/s were reached by varying both deposition temperature and working Argon gas pressure to ensure high manufacturing rates. After deposition, the precursor films were treated with a continuous-wave diode laser to achieve a crystallized material considered as the alternative light absorber. Firstly, the structural and optical properties of non-hydrogenated amorphous silicon precursor films were investigated by Raman spectroscopy, atomic force microscopy, X-ray diffraction, reflectance, and transmittance, respectively. Structural changes were observed in the as-deposited films at room temperature, suggesting an orderly structure within an amorphous silicon matrix; meanwhile, the films deposited at higher temperature pointed out an amorphous structure. Lastly, the effect of the precursor material’s deposition conditions, and the laser parameters used in the crystallization process on the quality and properties of the subsequent crystallized material was evaluated. The results showed a strong influence of deposition conditions used in the amorphous silicon precursor.

Different functionalities of materials based on indium tin oxide and fabricated at soft conditions were investigated with the goal of being used in a next generation of solar photovoltaic devices. These thin films were fabricated in a commercial UNIVEX 450B magnetron sputtering. The first studied functionality consisted of an effective n-type doped layer in an n-p heterojunction based on p-type crystalline silicon. At this point, the impact of the ITO film thickness (varied from 45 to 140 nm) and the substrate temperature (varied from room temperature to 250 °C) on the heterojunction parameters was evaluated separately. To avoid possible damages in the heterojunction interface, the applied ITO power was purposely set as low as 25 W; and to minimize the energy consumption, no heat treatment process was used. The second functionality consisted of indium-saving transparent conductive multicomponent materials for full spectrum applications. This was carried out by the doping of the ITO matrix with transition metals, as titanium and zinc. This action can reduce the production cost without sacrificing the optoelectronic film properties. The morphology, chemical, structural nature and optoelectronic properties were evaluated as function of the doping concentrations. The results revealed low manufactured and suitable films used successfully as conventional emitter, and near-infrared extended transparent conductive materials with superior performance that conventional ones, useful for full spectrum applications. Both can open interesting choices for cost-effective photovoltaic technologies.