Dr. Zahabul Islam
'%3e%3cpath%20d='M22.1642%2019.0924C21.7317%2018.068%2021.1041%2017.1375%2020.3163%2016.3527C19.5309%2015.5656%2018.6006%2014.9381%2017.5766%2014.5048C17.5674%2014.5002%2017.5582%2014.4979%2017.5491%2014.4933C18.9774%2013.4616%2019.9059%2011.7811%2019.9059%209.88504C19.9059%206.74408%2017.3611%204.19922%2014.2201%204.19922C11.0792%204.19922%208.53429%206.74408%208.53429%209.88504C8.53429%2011.7811%209.46282%2013.4616%2010.8912%2014.4956C10.882%2014.5002%2010.8728%2014.5025%2010.8636%2014.5071C9.83652%2014.9404%208.91487%2015.5617%208.1239%2016.355C7.33685%2017.1404%206.70933%2018.0707%206.276%2019.0947C5.85031%2020.0972%205.62072%2021.172%205.59967%2022.2609C5.59905%2022.2853%205.60335%2022.3097%205.61229%2022.3325C5.62123%2022.3553%205.63465%2022.376%205.65174%2022.3935C5.66883%2022.4111%205.68926%2022.425%205.71182%2022.4345C5.73437%2022.444%205.7586%2022.4489%205.78308%2022.4489H7.15868C7.25956%2022.4489%207.3398%2022.3686%207.3421%2022.2701C7.38795%2020.5001%208.09868%2018.8425%209.35506%2017.5861C10.655%2016.2862%2012.3814%2015.5709%2014.2201%2015.5709C16.0588%2015.5709%2017.7852%2016.2862%2019.0852%2017.5861C20.3415%2018.8425%2021.0523%2020.5001%2021.0981%2022.2701C21.1004%2022.3709%2021.1807%2022.4489%2021.2815%2022.4489H22.6571C22.6816%2022.4489%2022.7058%2022.444%2022.7284%2022.4345C22.751%2022.425%2022.7714%2022.4111%2022.7885%2022.3935C22.8056%2022.376%2022.819%2022.3553%2022.8279%2022.3325C22.8369%2022.3097%2022.8412%2022.2853%2022.8406%2022.2609C22.8176%2021.165%2022.5907%2020.0989%2022.1642%2019.0924ZM14.2201%2013.8284C13.1678%2013.8284%2012.1773%2013.418%2011.4322%2012.6729C10.6871%2011.9278%2010.2767%2010.9374%2010.2767%209.88504C10.2767%208.83271%2010.6871%207.84227%2011.4322%207.09715C12.1773%206.35204%2013.1678%205.94165%2014.2201%205.94165C15.2724%205.94165%2016.2629%206.35204%2017.008%207.09715C17.7531%207.84227%2018.1635%208.83271%2018.1635%209.88504C18.1635%2010.9374%2017.7531%2011.9278%2017.008%2012.6729C16.2629%2013.418%2015.2724%2013.8284%2014.2201%2013.8284Z'%20fill='%238590A2'/%3e%3c/g%3e%3c/svg%3e)
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Academic Career Length
14Years (2013-Present)
(Calculated once Scilit publication data is synced: current year − year of first publication + 1)
Representative Publications
View All Publications1 April 2019 in Journal of Materials Science & Technology
Journal Article
DWDaudi Waryoba
Daudi Waryoba
Zahabul IslamBWBaoming Wang
Baoming Wang
AHAman Haque
Aman Haque
1 November 2019 in Microelectronics Reliability
Journal Article
Zahabul IslamAPAngela L. Paoletta
Angela L. Paoletta
AMAnthony M. Monterrosa
Anthony M. Monterrosa
JSJennifer D. Schuler
Jennifer D. Schuler
TRTimothy J. Rupert
Timothy J. Rupert
AHAman Haque
Aman Haque
+2
1 November 2013 in Computational Materials Science
Journal Article
MMMonon Mahboob
Monon Mahboob
Zahabul Islam13 November 2021 in Metallurgical and Materials Transactions A
Journal Article
Zahabul IslamAAAnkur Kumar Agrawal
Ankur Kumar Agrawal
BRBehzad Rankouhi
Behzad Rankouhi
CMCollin Magnin
Collin Magnin
MAMark H. Anderson
Mark H. Anderson
DTDan J. Thoma
Dan J. Thoma
+1
1 April 2020 in Journal of Alloys and Compounds
Journal Article
DWDaudi Waryoba
Daudi Waryoba
Zahabul IslamBWBaoming Wang
Baoming Wang
AHAman Haque
Aman Haque19 June 2020 in IEEE Transactions on Electron Devices
Journal Article
Zahabul IslamMXMinghan Xian
Minghan Xian
AHAman Haque
Aman HaqueFRFan Ren
Fan Ren
Marko Jak TadjerSPStephen Pearton
Stephen Pearton +1
In this article, we investigate defect nucleation leading to device degradation in $\beta $ -Ga 2 O 3 Schottky barrier diodes by operating them inside a transmission electron microscope. Such in situ approach allows simultaneous visualization and quantitative device characterization, not possible with the current art of postmortem microscopy. High current density and associated mechanical and thermal fields are shown to induce different types of crystal defects, from vacancy cluster and stacking fault to microcrack generation prior to failure. These structural defects can act as traps for carrier and cause device failure at high biasing voltage. Fundamental insights on nucleation of these defects and their evolution are important from materials reliability and device design perspectives.
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