We demonstrated p-type conduction in MoS₂ grown with phosphorous pentoxide via chemical vapor deposition (CVD). Monolayer MoS₂ with a triangular shape and 15-µm grains was confirmed by atomic force microscopy. The difference between the Raman signals of the A_1g and E¹_2g modes for both the pristine and P-doped samples was 19.4 cm⁻¹. In the X-ray photoelectron spectroscopy results, the main core level peaks of P-doped MoS₂ downshifted by about 0.5 eV to a lower binding energy compared to the pristine material. Field-effect transistors (FETs) fabricated with the P-doped monolayer MoS₂ showed p-type conduction with a field-effect mobility of 0.023 cm²/V⋅s and an on/off current ratio of 10³, while FETs with the pristine MoS₂ showed n-type behavior with a field-effect mobility of 29.7 cm²/V⋅s and an on/off current ratio of 10⁵. The carriers in the FET channel were identified as holes with a concentration of 1.01 × 10¹¹ cm⁻² in P-doped MoS₂, while the pristine material had an electron concentration of 6.47 × 10¹¹ cm⁻².

Ferromagnetic materials have been attracting great interest in the last two decades due to their application in spintronics devices. One of the hot research areas in magnetism is currently the two-dimensional materials, transition metal dichalcogenides (TMDCs), which have unique physical properties. The origins and mechanisms of transition metal dichalcogenides (TMDCs), especially the correlation between magnetism and defects, have been studied recently. We investigate the changes in magnetic properties with a variation in annealing temperature for the nanoscale compound MoS₂. The pristine MoS₂ exhibits diamagnetic properties from low-to-room temperature. However, MoS₂ compounds annealed at different temperatures showed that the controllable magnetism and the strongest ferromagnetic results were obtained for the 700 °C-annealed sample. These magnetizations are attributed to the unpaired electrons of vacancy defects that are induced by annealing, which are confirmed using Raman spectroscopy and electron paramagnetic resonance spectroscopy (EPR).

This research focuses on exploring generalized electron emissions in one-dimensional conducting materials, specifically examining field emission and thermionic emission. Additionally, this study investigates one-dimensional thermal radiation. The current density is derived for both one-dimensional thermionic emission and one-dimensional field emission. A generalized current density in one dimension is devised, taking into account arbitrary accelerating fields and temperature conditions. The formula for the one-dimensional current density is depicted with accelerating field and temperature across various work function materials. The emission current is represented as a function of temperature for various electric fields. The emission current is also represented as a function of the electric field for various temperatures.

Bismuth doped ZnO (ZnBi_0.03O_0.97) thin films are grown using pulsed laser deposition. The existence of positively charged Bi, absence of metallic zinc and the Zn-O bond formation in Bi doped ZnO are confirmed using X-ray Photoelectron Spectroscopy (XPS). Temperature dependent resistivity and UV-visible absorption spectra show lowest resistivity with 8.44 × 10^-4 Ω cm at 300 K and average transmittance of 93 % in the visible region respectively. The robust ferromagnetic signature is observed at 350 K (7.156 × 10^-4 emu/g). This study suggests that Bi doped ZnO films should be a potential candidate for spin based optoelectronic applications.

The formation, including the density and height of the InFeP:Ag nanorods doped with noble metal Ag using an ion milling method, was preponderantly determined from transmission electron microscopy and x-ray diffraction analyses. We investigate, in particular, the enhanced ferromagnetism of the well-aligned InFeP:Ag nanorods. Auger electron spectroscopy and x-ray photoelectron spectroscopy measurements were carried out in order to investigate the incorporation of Ag and to verify the local chemical bonding of the InFeP:Ag nanorods. The variation of FWHM for the double-crystal x-ray rocking curve and triple-axis diffraction peaks demonstrates that noble metal Ag is incorporated into the InFeP:Ag nanorods. The noticeable ferromagnetic signature (M-H curve) of the InFeP:Ag nanorods is observed and T _c persists up to almost 350 K (3.9 × 10 ⁻⁴ emu g ⁻¹ ), as determined by temperature-dependence magnetization (M-T curve) measurements. This study suggests that the InFeP:Ag nanorods should be a potential candidate for the application of spintronic devices.