Ferromagnetic materials have been attracting great interest in the last two decades due to their application in spintronics devices. One of the hot research areas in magnetism is currently the two-dimensional materials, transition metal dichalcogenides (TMDCs), which have unique physical properties. The origins and mechanisms of transition metal dichalcogenides (TMDCs), especially the correlation between magnetism and defects, have been studied recently. We investigate the changes in magnetic properties with a variation in annealing temperature for the nanoscale compound MoS₂. The pristine MoS₂ exhibits diamagnetic properties from low-to-room temperature. However, MoS₂ compounds annealed at different temperatures showed that the controllable magnetism and the strongest ferromagnetic results were obtained for the 700 °C-annealed sample. These magnetizations are attributed to the unpaired electrons of vacancy defects that are induced by annealing, which are confirmed using Raman spectroscopy and electron paramagnetic resonance spectroscopy (EPR).

InZnP:Ag nano-rods fabricated by the ion milling method were thermally annealed in the 250~350 °C temperature range and investigated the optimum thermal annealing conditions to further understand the mutual correlation between the optical properties and the microscopic magnetic properties. The formation of InZnP:Ag nano-rods was determined from transmission electron microscopy (TEM), total reflectivity and Raman scattering analyses. The downward shifts of peak position for LO and TO modes in the Raman spectrum are indicative of the production of Ag ion-induced strain during the annealing process of the InZnP:Ag nano-rod samples. The appearance of two emission peaks of both (A⁰ X) and (e, Ag) in the PL spectrum indicated that acceptor states by Ag diffusion are visible due to the effective incorporation of Ag-creating acceptor states. The binding energy between the acceptor and the exciton measured as a function of temperature was found to be 21.2 meV for the sample annealed at 300 °C. The noticeable MFM image contrast and the clear change in the MFM phase with the scanning distance indicate the formation of the ferromagnetic spin coupling interaction on the surface of InZnP:Ag nano-rods by Ag diffusion. This study suggests that the InZnP:Ag nano-rods should be a potential candidate for the application of spintronic devices.

The band gap research in graphene is still a very important topic for materials application. Here, we report a band gap opening and p-type semiconducting property of the graphene by using an electrochemical doping on graphene surface. The manganese-oxide nanopar-ticles adsorbed on the graphene were used as the dopants in an electrolyte, which induce the band gap opening and the change of electronic structure. In addition, the fabricated graphene FET shows the p-type semiconductor behaviors. The temperature dependent conductivity of the p-type doped graphene at applied potential of 1.5 V during electro-chemical doping shows the formation of band gap of 0.23 eV, which is obtained from the fitting of conductivity equation. The semiconducting properties of manganese-oxide doped graphene is attributed to the formation of manganese-oxide nanoparticle on the surface of graphene.