A selenide integrated platform working in the mid-infrared was designed, fabricated and optically characterized at 7.7 µm. Ge-Sb-Se multilayered structures were deposited by RF magnetron sputtering. Using i-line photolithography and fluorine-based reactive ion etching, ridge waveguides were processed as Y-junction, spiral and S-shape waveguides. Single-mode optical propagation at 7.7 µm was observed by optical near-field imaging and optical propagation losses of 2.5dB/cm are measured. Limits of detection of 14.2 ppm and 1.6 ppm for methane and nitrous oxide, respectively, could be potentially measured by using this platform as an evanescent field sensor. Hence, these technological, experimental and theoretical results represent a first step towards the development of an integrated optical sensor operating in the mid-infrared wavelength range.

A compact amplifier based on chalcogenide Pr³⁺-doped micro-disk coupled to two ridge waveguides is designed and refined by means of a home-made computer code. The gain G ≈ 7.9 dB is simulated for a Pr³⁺ concentration of 10 000 ppm, input signal power of −30 dBm at the wavelength 4.7 µm and input pump power of 50 mW at the wavelength 1.55 µm. In the laser behavior, i.e. without input signal, the maximum slope efficiency S = 8.1 × 10⁻⁴ is obtained for an input pump power of 2 mW. This value is about six times higher than that simulated for an optimized erbium-doped micro-disk.

A comparative study of the linear and nonlinear optical properties of a novel triphenylamine–pyrimidine alternated oligomer and its corresponding V-shaped quadrupolar monomer is presented. Both chromophores strikingly exhibit the same spectral shape when considering their respective one- and two-photon absorption spectra. This effect was attributed to a weak interchromophore coupling within the oligomer which exhibits a highly distorted geometry resulting in a strong reduction of the effective conjugation length. The recursive implementation of nine monomers into a three-dimensional architecture leads however to a cooperative enhancement of the two-photon absorption (2PA) cross-section with a δ_MAX of 5093 GM at 800 nm. This very high 2PA ability has been oriented to improve the two-photon induced polymerization efficiency of a bicomponent photoinitiator system implying a hexaarylbiimidazole used as a H-abstractor and an aliphatic amine used as a H-donor. The photosensitizing mechanism is investigated and we clearly show that the intrinsic photoinitiation efficiency of the oligomer is increased by a factor 3 as compared to its corresponding monomer. We therefore demonstrate that such a two-photon sensitizing strategy leads to a synergy effect combining a higher photoinitiation reactivity and a very large two-photon absorption cross-section.

A micro-sensor based on selenide glasses for evanescent wave detection in mid-infrared spectral range was designed and fabricated. Ge-Sb-Se thin films were successfully deposited by radio-frequency magnetron sputtering. In order to characterize them spectroscopic ellipsometry, atomic force microscopy and contact angle measurements were employed to study near and middle infrared refractive index, surface roughness and the wettability, respectively. Selenide sputtered films were micro-patterned by means of reactive ion etching with inductively coupled plasma process enabling single-mode propagation at a wavelength of 7.7 µm for a waveguide width between 8 and 12 µm. Finally, optical waveguide surface was functionalized by deposition of a hydrophobic polymer, which will permit detection of organic molecules in water. Thus, the optical transducer is a ridge waveguide composed by cladding and guiding Ge-Sb-Se sputtered layers exhibiting a tailored refractive index contrast and a polymer layer onto its surface ready for environmental detections in middle infrared.

A comparison is presented between Eu implanted and Eu in situ doped GaN thin films showing that two predominant Eu sites are optically active around 620 nm in both types of samples with below and above bandgap excitation. One of these sites, identified as a Ga substitutional site, is common to both types of Eu doped GaN samples despite the difference in the GaN film growth method and in the doping technique. High-resolution photoluminescence (PL) spectra under resonant excitation reveal that in all samples these two host-sensitized sites are in small amount compared to the majority of Eu ions which occupy isolated Ga substitutional sites and thus cannot be excited through the GaN host. The relative concentrations of the two predominant host-sensitized Eu sites are strongly affected by the annealing temperature for Eu implanted samples and by the group III element time opening in the molecular beam epitaxy growth. Red luminescence decay characteristics for the two Eu sites reveal different excitation paths. PL dynamics under above bandgap excitation indicate that Eu ions occupying a Ga substitutional site are either excited directly into the ${{}^{5}D}_0$ level or into higher excited levels such as ${{}^{5}D}_1$ , while Eu ions sitting in the other site are only directly excited into the ${{}^{5}D}_0$ level. These differences are discussed in terms of the spectral overlap between the emission band of a nearby bound exciton and the absorption bands of Eu ions. The study of Eu doped GaN quantum dots reveals the existence of only one type of Eu site under above bandgap excitation, with Eu PL dynamics features similar to Eu ions in Ga substitutional sites.