Problem-based learning (PBL) is an educational method which involves learning by solving real problems. However, applying a PBL approach to engineering subjects in some cases became a challenging issue. Thus, it is important to determine the best ways in which engineering students can learn physics more effectively and solve problems relevant to their daily lives. The main aim of this study was to compare the final assessment grades in a physics course for students in the engineering program using PBL and traditional learning (TL) methods. The advantages and disadvantages of PBL and TL methods from the practical experience of lecturers are also presented. The study presented data of 460 first-year engineering students taking the physics course at Kaunas University of Technology. The information presented in this study is based on the insights, observations, and individual experiences of the authors as teaching staff. The results indicated that the application of the PBL method allows for enhancement in the teamwork, presentation, and critical thinking skills in physics. However, the TL method promotes the individual learning skills and wider theoretical knowledge in physics of students and is more suitable when the exam only includes closed-ended questions.

Lead zirconate titanate (PZT) is a widely used material with applications ranging from piezoelectric sensors to developing non-volatile memory devices. Pb(Zr_xTi_1−x)O₃ films were deposited by DC reactive magnetron sputtering at a temperature range of (500–600) °C. X-ray diffraction (XRD) indicated the perovskite phase formation in samples synthesized at 550 °C, which agrees with Raman data analysis. Scanning electron microscopy (SEM) measurements supplemented XRD data and showed the formation of dense PZT microstructures. Further X-ray photoelectron spectroscopy (XPS) analysis confirmed that the Zr/Ti ratio corresponds to the Pb(Zr_0.58Ti_0.42)O₃ content. Dielectric measurement of the same sample indicated dielectric permittivity to be around 150 at room temperature, possibly due to the defects in the structure. P-E measurements show ferroelectric behavior at a temperature range of (50–180) °C. It was found that the remnant polarization increased with temperature, and at the same time, coercive field values decreased. Such behavior can be attributed to energetically deep defects.

The plasma-activated reactive evaporation technique was used for the formation of indium-tin-oxide (ITO) films. The ITO films were deposited on a heated (up to 350 °C) glass substrates using various mass ratios of indium and tin. The optical and electrical properties of the deposited ITO films were determined. The influence of the indium-to-tin mass ratio on the optical transmittance, bandgap, resistivity and resistance of ITO films was investigated. The bandgap of ITO films was increased from 3.18 to 3.37 eV, and the M_In/M_Sn ratio increased from 4.25 to 10.00. The average values of optical transmittance at the visible light wavelengths increased from ~43% to ~64% as tin mass was reduced. We demonstrated that ITO films with low resistivity ranging from 7.4 × 10⁻³ to 43.7 × 10⁻³ Ω·cm were obtained, and the M_In/M_Sn ratio changed from 4.25 to 10.00. The ITO film formed at the 9.25 M_In/M_Sn ratio demonstrated high transparency, a wide bandgap and optimal resistivity and resistance values. The heating characteristics indicated that the frozen ice on the ITO films was completely removed after 30 s when the applied voltage was 24 V.