hui dai

Dr. hui dai

Shandong University, Qingdao, Shandong, China
orcid

Research Focus & Metrics

Academic Career Length

5Years (2022-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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25 March 2022 in Metals
Verified
Journal Article
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HDhui dai
hui dai
YMYu Miaosen
Yu Miaosen
YDYibin Dong
Yibin Dong
WSWahyu Setyawan
Wahyu Setyawan
NGNing Gao
Ning Gao
XWXuelin Wang
Xuelin Wang
The FeCrAl alloy system is recognized as one of the candidate materials for accident-tolerant fuel (ATF) cladding in the nuclear power industry due to its high oxidation resistance under irradiation and high-temperature environments. The concentrations of Cr and Al have a significant effect on elastic properties of the FeCrAl alloy. In this work, elastic constants C11, C12, C44, bulk modulus and shear modulus of FeCrAl alloy were calculated with molecular dynamics methods. We explored compositions with 1–15 wt.% Cr and 1–5 wt.% Al at temperatures from 0 K to 750 K. The results show that the concentrations of Al and Cr have different effects on the elastic constants. When the concentration of Al was fixed, a decrease in bulk modulus and shear modulus with increasing Cr content was observed, consistent with previous experimental results. The dependence of elastic constants on temperature was also the same as in the experiments. Investigations into elastic properties of defect-containing alloys have shown that vacancies, voids, interstitials and Cr-rich precipitations have different effects on elastic properties of FeCrAl alloys. Investigations of elastic properties of defect-containing alloys have shown that vacancies, void, interstitials and Cr-rich precipitations have different effects on elastic properties of FeCrAl alloys. Therefore, the present results indicate that both the Cr and Al concentrations and radiation defects should be considered to develop and apply the FeCrAl alloy in ATF design.

22 February 2023 in Metals
Verified
Journal Article
Open access
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JSJian Sun
Jian Sun
YMYu Miaosen
Yu Miaosen
*W* Wei
* Wei
HDhui dai
hui dai
WMWenxue Ma
Wenxue Ma
XWXuelin Wang
Xuelin Wang
FeCrAl is regarded as one of the most promising cladding materials for accident-tolerant fuel at nuclear fission reactors due to its comprehensive properties of inherent corrosion resistance, excellent irradiation resistance, high-temperature oxidation resistance, and stress corrosion cracking resistance. In this work, the irradiation response of FeCrAl irradiated by 2.4 MeV He2+ ions with a fluence of 1.1 × 1016 cm−2 at room temperature was studied using X-ray diffraction, transmission electron microscopy, and nanoindentation. The characterization results of structural and mechanical properties showed that only black-dot defects exist in irradiated FeCrAl samples, and that the hardness of the irradiated samples was 11.5% higher than that of the unirradiated samples. Similar to other types of radiation defects, black-dot defects acted as fixed defect obstacles and hindered the movement of slip dislocations moving under the applied load, resulting in a significant increase in the hardness of FeCrAl. Importantly, this work points out that irradiation-induced black-dot defects can significantly affect the mechanical properties of materials, and that their contribution to radiation hardening cannot be ignored.

31 March 2025 in Applied Surface Science
Verified
Journal Article
Closed access
HDhui dai
hui dai
AJAnxin Jiao
Anxin Jiao
JLJiacheng Liang
Jiacheng Liang
ZHZhiyan Hou
Zhiyan Hou
XHXinqing Han
Xinqing Han
XWXuelin Wang
Xuelin Wang

6 November 2025 in Materials
Verified
Journal Article
Open access
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HDhui dai
hui dai
ZHZhiyan Hou
Zhiyan Hou
XHXinqing Han
Xinqing Han
JLJiacheng Liang
Jiacheng Liang
AJAnxin Jiao
Anxin Jiao
XWXuelin Wang
Xuelin Wang
To optimize the design of silicon carbide (SiC) devices for applications in space and nuclear environments, this work introduces varying degrees of lattice damage into SiC through controlled irradiation conditions, with Raman spectroscopy revealing its damage evolution behavior and quantitatively characterizing the increasing trend of disorder with irradiation fluences. Fine analysis of the A1(LO) phonon mode demonstrates that proliferation of irradiation-induced acceptor centers and accumulation of scattering defects lead to significant attenuation of carrier concentration and mobility (cross-verified by Hall effect measurements), thereby causing degradation in electrical conductivity of SiC. Subsequent electrical testing confirms an orders-of-magnitude reduction in conductivity, establishing a quantitative correlation model with total disorder quantified by the DI/DS model. The non-destructive Raman technique enables simultaneous acquisition of material damage characteristics and quantitative electrical performance degradation, providing a predictive framework for the evolution of electrical behavior for SiC under irradiation damage, with significant implications for optimizing irradiation-hardened device designs.