To optimize the design of silicon carbide (SiC) devices for applications in space and nuclear environments, this work introduces varying degrees of lattice damage into SiC through controlled irradiation conditions, with Raman spectroscopy revealing its damage evolution behavior and quantitatively characterizing the increasing trend of disorder with irradiation fluences. Fine analysis of the A₁(LO) phonon mode demonstrates that proliferation of irradiation-induced acceptor centers and accumulation of scattering defects lead to significant attenuation of carrier concentration and mobility (cross-verified by Hall effect measurements), thereby causing degradation in electrical conductivity of SiC. Subsequent electrical testing confirms an orders-of-magnitude reduction in conductivity, establishing a quantitative correlation model with total disorder quantified by the DI/DS model. The non-destructive Raman technique enables simultaneous acquisition of material damage characteristics and quantitative electrical performance degradation, providing a predictive framework for the evolution of electrical behavior for SiC under irradiation damage, with significant implications for optimizing irradiation-hardened device designs.