Ultraviolet-visible-near infrared broadband photodetectors have significant prospects in many fields such as image sensing, communication, chemical sensing, and day and nighttime surveillance. Hybrid one-dimensional (1D) and zero-dimensional (0D) materials are attractive for broadband-responsive photodetectors since its unique charges transfer characteristics and facile fabrication processes. Herein, a Si/ZnO nanowires/Ge quantum dots photodetector has been constructed via processes that combined electrospinning and spin-coating methods. A broadband response behavior from ultraviolet to near-infrared (from 250 to 1550 nm) is observed. The responsivity of the hybrid structure increases around three times from 550 to 1100 nm compared with the pure Si photodetector. Moreover, when the photodetector is illuminated by a light source exceeding 1100 nm, such as 1310 and 1550 nm, there is also a significant photoresponse. Additionally, the ZnO NWs/Ge quantum dots heterostructure is expected to be used in flexible substrates, which benefits from electrospinning and spin-coating processes. The strategy that combines 1D ZnO NWs and 0D solution-processed Ge QDs nanostructures may open a new avenue for flexible and broadband photodetector.

Self-assembled MnGe quantum dots (QDs) were grown on Si (001) substrates using molecular beam epitaxy with different growth temperatures and Ge deposition thicknesses to explore the interaction among Mn doping, Ge deposition, the formation of intermetallics, and the ferromagnetism of QDs. With the introduction of Mn atoms, the QDs become large and the density significantly decreases due to the improvement in the surface migration ability of Ge atoms. The growth temperature is one of the most important factors deciding whether intermetallic phases form between Mn and Ge. We found that Mn atoms can segregate from the Ge matrix when the growth temperature exceeds 550 °C, and the strongest ferromagnetism of QDs occurs at a growth temperature of 450 °C. As the Ge deposition thickness increases, the morphology of QDs changes and the ferromagnetic properties decrease gradually. The results clearly indicate the morphological evolution of MnGe QDs and the formation conditions of intermetallics between Mn and Ge, such as Mn₅Ge₃ and Mn₁₁Ge₈.