Hall-effect in semiconductors has wide applications for magnetic field sensing. Yet, a standard Hall sensor retains two problems: its linearity is affected by the non-uniformity of the current distribution; the sensitivity is bias-dependent, with linearity decreasing with increasing bias current. In order to improve the performance, we here propose a novel structure which realizes bias-free, photo-induced Hall sensors. The system consists of a semi-transparent metal Pt and a semiconductor Si or GaAs to form a Schottky contact. We systematically compared the photo-induced Schottky behaviors and Hall effects without net current flowing, depending on various magnetic fields, light intensities and wavelengths of Pt/GaAs and Pt/Si junctions. The electrical characteristics of the Schottky photo-diodes were fitted to obtain the barrier height as a function of light intensity. We show that the open-circuit Hall voltage of Pt/GaAs junction is orders of magnitude lower than that of Pt/Si, and the barrier height of GaAs is smaller. It should be attributed to the surface states in GaAs which block the carrier drifting. This work not only realizes the physical investigations of photo-induced Hall effects in Pt/GaAs and Pt/Si Schottky junctions, but also opens a new pathway for bias-free magnetic sensing with high linearity and sensitivity comparing to commercial Hall-sensors.

The use of lead-free ceramic film materials with positive temperature coefficient of resistivity (PTCR) is widespread in temperature heaters and sensors in micro-electromechanical systems. In this research, the out of plane transport properties of the BiFeO₃ (BFO) films have been studied. Surprisingly, PTCR was found in the BFO ceramic films due to the strongly correlated interaction between the multiferroic material BFO and the superconductor YBCO perovskite oxides. To our knowledge, this is the first report on the PTCR effect of BFO films. The BFO/YBCO interface and the bulk conductivity of BFO are important for the PTCR effect, as they make it possible to compare the transport properties of Au/BFO/YBCO- and YBCO/BFO/YBCO-type structures. PTCR was observed in Au/BFO/YBCO at a bias voltage of more than 2 V, but not in the YBCO/BFO/YBCO, even with a 40 V bias voltage. PTCR was found after BFO breakdown of a YBCO/BFO/YBCO capacitor. This indicated that the conductivity of BFO is critical for PTCR. The dependence of PTCR on the superconducting transition temperature illustrates that a cooper-pair can be injected into BFO. Our work presents a method by which to produce a lead-free ceramic film material with PTCR.

The ability to accurately monitor chiral biological molecules is of great significance for their potential applications in disease diagnosis and virus detection. As the existing chiral detection technologies are mainly relying on an optical method by using left/right circularly polarized light, the universality is low and the operation is complicated. Moreover, large quantity of chiral molecules is required, causing low detection efficiency. Here, a self-assembled monolayer of polypeptides has been fabricated to realize trace detection of chirality based on spin selectivity of photon–electron interaction. We have utilized Kerr technique to detect the rotation angle by the molecular monolayer, which indicates the chirality of polypeptides. The chiral structure of a biological molecule could result in spin-selectivity of electrons and thus influence the interaction between electron spin and light polarization. A Kerr rotation angle of ∼3° has been obviously observed, equivalent to the magneto-optic Kerr effect without magnetic material or magnetic field. Furthermore, we have provided a novel solution to achieve chirality discrimination and amplification simultaneously through an optical fiber. The proposed design is applicable for chiral detection via increasing their differential output signal, which clearly demonstrates a useful strategy toward chirality characterization of biological molecules.

Defects are an inevitable occurrence during the manufacturing and use of ferromagnetic materials, making it crucial to study the microscopic mechanism of magnetostrictive properties of ferromagnetic materials with defects. This paper conducts molecular dynamics simulations on low-dimensional iron thin films containing hole or crack defects, analyzes and compares the impact of defect size on magnetostrictive properties, and investigates the microscopic mechanism of their effects. The results indicate that the saturation magnetostrictive strains of the defect models do not increase monotonically as the defect size increases. Additionally, it is discovered that the arrangement of atomic magnetic moments in the initial magnetic moment configuration also affects the magnetostrictive properties. When controlling the size of the hole or crack within a certain defect area, it is found that the hole size has less influence on the initial magnetic moment configuration, resulting in a smaller corresponding change in the saturation strain and thus having a lesser impact on the magnetostrictive properties. Conversely, when the crack size changes, the arrangement of the atomic magnetic moments in the initial magnetic moment configuration changes more significantly, resulting in a greater corresponding change in saturation strain, and thus having a greater impact on the magnetostriction performance.