Solution-processed organic–inorganic halide lead perovskites have attracted increasing attention due to their great potential in low-cost, effective, and versatile light emission applications and large-scale portable optoelectronic devices. In this paper, formamidinium lead tribromide perovskite thin films composited with polyethylene oxide (PEO) were fabricated by a solution processing method. Great enhancement of photoluminescence was observed and more attractively, two-photon-pumped random lasing action could be achieved at room temperature when pumped by a nanosecond pulse laser with excitation wavelength centered at 1064 nm. Evident transition from spontaneous upconversion emission to random lasing action was investigated by monitoring the log–log light emission slope and peak width at half height. The lasing threshold is at around 1.1 mJ cm⁻², which is comparable to that of other two-photon upconversion random lasers. The efficient random lasing emission originates from the multiple random scattering provided by the micrometer-scale rugged morphology and polycrystalline grain boundaries. Compared with conventional lasers that normally serve as a coherent light source, the perovskite random lasers show promise in fabricating low-cost thin-film lasing devices for flexible and speckle-free imaging applications.

Quasi-period cylindrical nanostructures with both diameters and intervals of about 100 nm are manufactured on the surfaces of ${\mathrm{Nd}}^{3+}$-doped lanthanum lead zirconate titanate ceramics by femtosecond laser irradiation under ${\mathrm{SF}}_6$ atmosphere. A light-emission enhancement of more than 20 times is investigated, accompanied by an extremely long trailing-off time of light emission and lower threshold. A specific polarization state of the light emission is achieved and tuned by changing the incident regions of the pumping source. The increased absorption coefficient of the specimen is discussed based on multiple scattering and weak localization of light. In addition, both the scatterers provided by the laser-machined nanostructure and the recurrent photoinduced trapping and re-excitation process participated in the enhancement of the light emission. This Letter offers new insight to improve the luminescence property of laser materials, as well as to broaden the range of exploring the weak localization of light and random lasers.

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Controllable photoinduced scatterers were investigated in Nd³⁺-doped lead lanthanum zirconate titanate (PLZT) perovskite ceramics, the total number of which will increase dramatically with the induction of light intensity.

Herein, significant enhancement of second- and third-harmonic generation efficiencies in a 1 mol% Er³⁺ and 0.07 mol% Fe²⁺-doped lithium niobate single-crystal plate were achieved after ablating periodic cylindrical pit arrays on the surface. Enhanced absorption and reduced transmittance of light were measured when the incident light signal passed through the patterned sample. Enhanced photoluminescence and two-photon-pumped upconversion emission spectra were also explored to obtain more details on the efficiency gains. The excitation-energy-dependent second-harmonic generation efficiency was measured, and an enhancement as high as 20-fold was calculated. The conversion efficiency of second-harmonic generation is 1 to 3 orders higher than that from other lithium niobite metasurfaces and nanoantennas. This work provides a convenient and effective method to improve the nonlinear conversion efficiency in a thin lithium niobite plate, which is desirable for applying to integrated optical devices.

Light-induced degradation (LID) phenomenon is commonly found in optoelectronics devices. Self-healing effect in halide lead perovskite solar cells was investigated since the electrons and holes in the shallow traps could escape easily at room temperature. However, the degradation in the semiconductors could not easily recover at room temperature, and many of them needed annealing at temperatures in the several hundreds, which was not friendly to the integrated optoelectronic semiconductor devices. To solve this problem, in this work, LID effect of photocurrent in p-type Mg-doped gallium nitride thin films was investigated, and deep defect and vacancy traps played a vital role in the LID and healing process. This work provides a contactless way to heal the photocurrent behavior to its initial level, which is desirable in integrated devices.