Organic-inorganic hybrid perovskite has attracted intensive attention from researchers as the gain medium in lasing devices. However, achieving electrically driven lasing remains a significant challenge. Modifying the devices’ structure to enhance the optically pumped amplified spontaneous emission (ASE) is the key issue. In this work, gold nanoparticles (Au NPs) are first doped into PEDOT: PSS buffer layer in a slab waveguide device structure: Quartz/PEDOT: PSS (with or w/o Au NPs)/CH₃NH₃PbBr₃. As a result, the facile device shows a significantly enhanced ASE intensity and a narrowed full width at half maximum. Based on experiments and theoretical simulation data, the improvement is mainly a result of the compound surface plasmon resonance, including simultaneous near- and far-field effects, both of which could increase the density of excitons excited state and accelerate the radiative decay process. This method is highly significant for the design and development and fabrication of high-performance organic-inorganic hybrid perovskite lasing diodes.

In order to achieve a wider organic light-emitting diode (OLED) commercial popularity, solution processing inverted polymer light-emitting diode (iPLED) is a trend for further development, but there is still a gap for solution processing devices to achieve commercialization. The improvement of the performance iPLEDs is a research topic of intense current interest. The modification of the cathode interface layer of poly[(9,9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)] (PF-NR2) can greatly improve the performance of the devices. However, the electron transportation of the cathode interface layer of PF-NR2 films is currently poor, and there is substantial interest in improving its electron transportation to further enhance the performance of organic optoelectronic devices. In this paper, gold nanoparticles (Au NPs) with a particle size of 20 nm were prepared and doped into the interface layer PF-NR2 at a specified ratio. The electron transportation of the interface layer of PF-NR2 was greatly improved, as judged by conductive atomic force microscopy measurements, which is due to the excellent conductivity of Au NPs. Herein, we demonstrate improved electron transportation of the interface layer by doping Au NPs in PF-NR2 film, which provides important and practical theoretical guidance and technical support for the preparation of high performance organic optoelectronic devices.

Light-induced degradation (LID) phenomenon is commonly found in optoelectronics devices. Self-healing effect in halide lead perovskite solar cells was investigated since the electrons and holes in the shallow traps could escape easily at room temperature. However, the degradation in the semiconductors could not easily recover at room temperature, and many of them needed annealing at temperatures in the several hundreds, which was not friendly to the integrated optoelectronic semiconductor devices. To solve this problem, in this work, LID effect of photocurrent in p-type Mg-doped gallium nitride thin films was investigated, and deep defect and vacancy traps played a vital role in the LID and healing process. This work provides a contactless way to heal the photocurrent behavior to its initial level, which is desirable in integrated devices.