Sahitya Vegesna

Mr. Sahitya Vegesna

Leibniz Institute of Photonic Technology, Jena, Thuringia, Germany
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orcid

Research Focus & Metrics

Academic Career Length

10Years (2017-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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21 April 2020 in Scientific Reports
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SVSahitya Vegesna
Sahitya Vegesna
VBVinayak J. Bhat
Vinayak J. Bhat
DBDanilo Bürger
Danilo Bürger
JDJan Dellith
Jan Dellith
ISIlona Skorupa
Ilona Skorupa
HSHeidemarie Schmidt
Heidemarie Schmidt
A novel small signal equivalent circuit model is proposed in the inversion regime of metal/(ZnO, ZnMnO, and ZnCoO) semiconductor/Si3N4 insulator/p-Si semiconductor (MSIS) structures to describe the distinctive nonlinear frequency dependent capacitance (C-F) and conductance (G-F) behaviour in the frequency range from 50 Hz to 1 MHz. We modelled the fully depleted ZnO thin films to extract the static dielectric constant (εr) of ZnO, ZnMnO, and ZnCoO. The extracted enhancement of static dielectric constant in magnetic n-type conducting ZnCoO (εr ≥ 13.0) and ZnMnO (εr ≥ 25.8) in comparison to unmagnetic ZnO (εr = 8.3–9.3) is related to the electrical polarizability of donor-type bound magnetic polarons (BMP) in the several hundred GHz range (120 GHz for CdMnTe). The formation of donor-BMP is enabled in n-type conducting, magnetic ZnO by the s-d exchange interaction between the electron spin of positively charged oxygen vacancies $${V}_{o}^{+}$$Vo+ in the BMP center and the electron spins of substitutional Mn2+ and Co2+ ions in ZnMnO and ZnCoO, respectively. The BMP radius scales with the Bohr radius which is proportional to the static dielectric constant. Here we show how BMP overlap can be realized in magnetic n-ZnO by increasing its static dielectric constant and guide researchers in the field of transparent spintronics towards ferromagnetism in magnetic, n-ZnO.

30 July 2025 in Physica B: Condensed Matter
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SAShahban Ali
Shahban Ali
SSSarmiza Elena Stanca
Sarmiza Elena Stanca
SVSahitya Vegesna
Sahitya Vegesna
GSGabriele Schmidl
Gabriele Schmidl
MDMarco Diegel
Marco Diegel
HKHeidemarie Krüger
Heidemarie Krüger

Verified
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VBVinayak J. Bhat
Vinayak J. Bhat
SVSahitya Vegesna
Sahitya Vegesna
KKKiani Kiani
Kiani Kiani
XZXianyue Zhao
Xianyue Zhao
DBDaniel Blaschke
Daniel Blaschke
HSHeidemarie Schmidt
Heidemarie Schmidt
Using two different types of impedance biochips (PS5 and BS5) with ring top electrodes, a distinct change of measured impedance has been detected after adding 1–5 µL (with dead or live Gram-positive Lysinibacillus sphaericus JG-A12 cells to 20 µL DI water inside the ring top electrode. We relate observed change of measured impedance to change of membrane potential of L. sphaericus JG-A12 cells. In contrast to impedance measurements, optical density (OD) measurements cannot be used to distinguish between dead and live cells. Dead L. sphaericus JG-A12 cells have been obtained by adding 0.02 mg/mL of the antibiotics tetracycline and 0.1 mg/mL chloramphenicol to a batch with OD0.5 and by incubation for 24 h, 30 °C, 120 rpm in the dark. For impedance measurements, we have used batches with a cell density of 25.5 × 108 cells/mL (OD8.5) and 270.0 × 108 cells/mL (OD90.0). The impedance biochip PS5 can be used to detect the more resistive and less capacitive live L. sphaericus JG-A12 cells. Also, the impedance biochip BS5 can be used to detect the less resistive and more capacitive dead L. sphaericus JG-A12 cells. An outlook on the application of the impedance biochips for high-throughput drug screening, e.g., against multi-drug-resistant Gram-positive bacteria, is given.

12 September 2024 in Physical Review Applied
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SVSahitya Vegesna
Sahitya Vegesna
VRVenkata Rao Rayapati
Venkata Rao Rayapati
HSHeidemarie Schmidt
Heidemarie Schmidt
Interface-type, analog memristors have quite a reputation for real-time applications in edge sensorics, edge computing, and neuromorphic computing. The n-type conducting BiFeO3 (BFO) is such an interface-type, analog memristor, which is also nonlinear and can therefore not only store, but also process data in the same memristor cell without data transfer between the data-storage unit and the data-processing unit. Here we present a physical memristor model, which describes the hysteretic current-voltage curves of the BFO memristor in the small and large current-voltage range. Extracted internal state variables are reconfigured by the ion drift in the two write branches and are determining the electron transport in the two read branches. Simulation of electronic circuits with the BFO interface-type, analog memristors was not possible so far because previous physical memristor models have not captured the full range of internal state variables. We show quantitative agreement between modeled and experimental current-voltage curves exemplarily of three different BFO memristors in the small and large current-voltage ranges. Extracted dynamic and static internal state variables in the two full write branches and in the two full read branches, respectively, can be used for simulating electronic circuits with BFO memristors, e.g., in edge sensorics, edge computing, and neuromorphic computing.

5 June 2019 in Journal of Applied Physics
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SVSahitya Vegesna
Sahitya Vegesna
DBDanilo Bürger
Danilo Bürger
RPRajkumar Patra
Rajkumar Patra
JDJan Dellith
Jan Dellith
BABarbara Abendroth
Barbara Abendroth
HSHeidemarie Schmidt
Heidemarie Schmidt
Magnetoconductivity of ten ZnO, Zn 1 − x Co x O, and Zn 1 − x Mn x O thin films with nominal concentrations of 2.0 at.% and 0.1 at.% of Co 2 + and Mn 2 + ions, respectively, has been analyzed in the temperature range from 5 K to 200 K in in-plane and out-of-plane magnetic fields up to 6 T. The formation of a highly conducting surface layer can be controlled during thin film deposition, leading to a large variation of the sheet resistance, namely, from 2 × 10 3 Ω / ◻ to 1 × 10 5 Ω / ◻ at room temperature. Depending on the thickness of the highly conducting surface layer, a single two-dimensional (2D), a single three-dimensional (3D), or a two-dimensional and three-dimensional (2D + 3D) parallel conducting model was chosen to analyze the measured magnetoconductivity of the magnetic ZnO thin films with different electron spins ( S = 5 / 2 for Zn 1 − x Mn x O and S = 3 / 2 for Zn 1 − x Co x O) and with different Landé g -factors (isotropic for 3D Zn 1 − x Mn x O and 2D Zn 1 − x Co x O and anisotropic for 2D Zn 1 − x Mn x O and 3D Zn 1 − x Co x O).

4 September 2024 in Sensors
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VBVinayak Jayram Bhat
Vinayak Jayram Bhat
DBDaniel Blaschke
Daniel Blaschke
SVSahitya Vegesna
Sahitya Vegesna
SBSindy Burgold-Voigt
Sindy Burgold-Voigt
EMElke Müller
Elke Müller
HSHeidemarie Schmidt
Heidemarie Schmidt
The accurate determination of the post-dilution concentration of biological buffers is essential for retaining the necessary properties and effectiveness of the buffer to maintain stable cellular environments and optimal conditions for biochemical reactions. In this work, we introduce a silicon-based impedance chip, which offers a rapid and reagent-free approach for monitoring the buffer concentrations after dilution with deionized (DI) water. The impedance of the impedance chip is measured, and the impedance data are modeled using a multiparameter equivalent circuit model. We investigated six aqueous biological buffers with pH values above and below the physiological pH for most tissues (pH ~ 7.2–7.4) following dilution with DI water by factors of 2.0, 10.0, 20.0, 100.0, and 200.0. The impedance measurement is then performed for the frequency spectrum of 40 Hz to 1 MHz. From the interpretation of the impedance measurement using the multiparameter equivalent circuit model, we report a buffer-sensitive equivalent circuit parameter RAu/Si of the silicon-based impedance chip showing a linear trend on a logarithmic scale with the buffer concentration change after dilution. The parameter RAu/Si is independent of the buffer pH and the added volume. The results demonstrate the efficacy of the silicon-based impedance chip as a versatile tool for precise post-dilution concentration determination of diverse biologically relevant buffers. The presented impedance chip offers rapid, accurate, and reliable monitoring, making it highly suitable for integration into automated liquid-handling systems to enhance the efficiency and precision of biological and chemical processes.