When a current is passed through a non-magnetic metal with strong spin-orbit coupling, an orthogonal spin current is generated. This spin current can be used to switch the magnetization of an adjacent ferromagnetic layer or drive its magnetization into continuous precession. The interface, which is not necessarily sharp, and the crystallographic structure of the nonmagnetic metal can both affect the strength of current-induced spin-orbit torques. Here, we investigate the effects of interface intermixing and film microstructure on spin-orbit torques in perpendicularly magnetized Ta/Co₄₀Fe₄₀B₂₀/MgO trilayers with different Ta layer thickness (5 nm, 10 nm, 15 nm), greater than the spin diffusion length. Effective spin-orbit torques are determined from harmonic Hall voltage measurements performed at temperatures ranging from 20 K to 300 K. We account for the temperature dependence of damping-like and field-like torques by including an additional contribution from the Ta/CoFeB interface in the spin diffusion model. Using this approach, the temperature variations of the spin Hall angle in the Ta underlayer and at the Ta/CoFeB interface are determined separately. Our results indicate an almost temperature-independent spin Hall angle of $${{\boldsymbol{\theta }}}_{{\boldsymbol{SH}}}^{{\boldsymbol{N}}}\approx -{\bf{0.2}}$$θ SH N ≈ − 0.2 in Ta and a strongly temperature-dependent $${{\boldsymbol{\theta }}}_{{\boldsymbol{SH}}}^{{\boldsymbol{N}}}$$θ SH N for the intermixed Ta/CoFeB interface.

We report on the temperature variation of spin-orbit torques in perpendicularly magnetized W/CoFeB bilayers. Harmonic Hall voltage measurements in perpendicularly magnetized CoFeB reveal increased longitudinal and transverse effective magnetic field components at low temperatures. The damping-like spin-orbit torque reaches an efficiency of 0.55 at 19 K. Scanning transmission electron microscopy and X-ray reflectivity measurements indicate that considerable interface mixing between W and CoFeB may be responsible for strong spin-orbit interactions.

Current induced magnetization switching and interlayer exchange coupling (IEC) in sputtered CoFeB/MgO/CoFeB exchange-biased magnetic tunnel junctions with an extremely thin (0.96–0.62 nm) MgO wedge barrier is investigated. The IEC is found to be ferromagnetic for all samples and the associated energy increases exponentially down to a barrier thickness of 0.7 nm. Nanopillars with resistance area product ranging from 1.8 to $10\Omega \mu {\text{m}}^2$ and sizes of $0.13\mu {\text{m}}^2$ down to $0.03\mu {\text{m}}^2$ and tunneling magnetoresistance values of up to 170% were prepared. We found, that the critical current density increases with decreasing MgO barrier thickness. The experimental data and theoretical estimations show that the barrier thickness dependence of the spin transfer torque can largely be explained by a reduction in the tunnel current polarization at very small barrier thickness.

We report on a voltage-tunable radio-frequency (RF) detector based on a magnetic tunnel junction (MTJ). The spin-torque diode effect is used to excite and/or detect RF oscillations in the magnetic free layer of the MTJ. In order to reduce the overall in-plane magnetic anisotropy of the free layer, we take advantage of the perpendicular magnetic anisotropy at the interface between ferromagnetic and insulating layers. The applied bias voltage is shown to have a significant influence on the magnetic anisotropy, and thus on the resonance frequency of the device. This influence also depends on the voltage polarity. The obtained results are accounted for in terms of the interplay of spin-transfer-torque and voltage-controlled magnetic anisotropy effects.