Susana Cardoso De Freitas

Dr. Susana Cardoso De Freitas

INESC-Microsystems and nanotechnologies
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orcid

Research Focus & Metrics

Academic Career Length

30Years (1997-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

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1 September 2004 in Trends in Biotechnology
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Journal Article
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DGDaniel L. Graham
Daniel L. Graham
HFHugo Alexandre Ferreira
Hugo Alexandre Ferreira
PFPaulo Freitas*
Paulo Freitas*

5 April 2007 in Journal of Physics: Condensed Matter
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Journal Article
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PFPaulo Freitas*
Paulo Freitas*
RFRicardo Ferreira
Ricardo Ferreira
Susana Cardoso De FreitasSusana Cardoso De Freitas
Susana Cardoso De Freitas
Filipe Arroyo CardosoFilipe Arroyo Cardoso
Filipe Arroyo Cardoso

8 February 2016 in Nature Nanotechnology
Verified
Journal Article
Closed access
THT. J. Huisman
T. J. Huisman
RMR. V. Mikhaylovskiy
R. V. Mikhaylovskiy
JCJ. D. Costa
J. D. Costa
FFF. Freimuth
F. Freimuth
EPElvira Paz
Elvira Paz
AKA. V. Kimel
A. V. Kimel

1 July 1987 in Physical Review B
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Journal Article
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PFPaulo Freitas*
Paulo Freitas*
CTC. C. Tsuei
C. C. Tsuei
TPT. S. Plaskett
T. S. Plaskett
The rounding of resistivity near and above the superconductivity transition temperature Tc, observed in the Y1 Ba2 Cu3 O9−δ superconductor, is found to be a manifestation of thermodynamic fluctuations. A quantitative agreement between the experiment and the three-dimensional (3D) Aslamazov-Larkin theory was achieved near Tc Low-field measurements of the excess diamagnetism are also in agreement with the 3D theory of Prange. These results strongly suggest that superconductivity in high-Tc copper oxides (Y1 Ba2 Cu3 O9−δ) is basically 3D in nature.

5 March 2019 in IEEE Transactions on Magnetics
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CZChao Zheng
Chao Zheng
KZKe Zhu
Ke Zhu
Susana Cardoso De FreitasSusana Cardoso De Freitas
Susana Cardoso De Freitas
Jen-Yuan (James) ChangJen-Yuan (James) Chang
Jen-Yuan (James) Chang
JDJoseph E. Davies
Joseph E. Davies
Philip PongPhilip Pong
Philip Pong
Magnetoresistive (MR) sensors have been identified as promising candidates for the development of high-performance magnetometers due to their high sensitivity, low cost, low power consumption, and small size. The rapid advance of MR sensor technology has opened up a variety of MR sensor applications. These applications are in different areas that require MR sensors with different properties. Future MR sensor development in each of these areas requires an overview and a strategic guide. An MR sensor roadmap (non-recording applications) was therefore developed and made public by the Technical Committee of the IEEE Magnetics Society with the aim to provide an research and development (R&D) guide for MR sensors intended to be used by industry, government, and academia. The roadmap was developed over a three-year period and coordinated by an international effort of 22 taskforce members from ten countries and 17 organizations, including universities, research institutes, and sensor companies. In this paper, the current status of MR sensors for non-recording applications was identified by analyzing the patent and publication statistics. As a result, timescales for MR sensor development were established and critical milestones for sensor parameters were extracted in order to gain insight into potential MR sensor applications (non-recording). Five application areas were identified, and five MR sensor roadmaps were established. These include biomedical applications, flexible electronics, position sensing and human-computer interactions, non-destructive evaluation and monitoring, and navigation and transportation. Each roadmap was analyzed using a logistic growth model, and new opportunities were predicted based on the extrapolated curve, forecast milestones, and professional judgment of the taskforce members. This paper provides a framework for MR sensor technology (non-recording applications) to be used for public and private R&D planning, in order to provide guidance into likely MR sensor applications, products, and services expected in the next 15 years and beyond.

1 September 2006 in Journal of Applied Physics
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Journal Article
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CBC. Bilzer
C. Bilzer
TDT. Devolder
T. Devolder
JKJoo-Von Kim
Joo-Von Kim
GCG. Counil
G. Counil
CCC. Chappert
C. Chappert
PFPaulo Freitas*
Paulo Freitas*
We study the magnetization damping in ion-beam deposited Co72Fe18B10 thin films as a function of film thickness and crystalline state. As-deposited amorphous layers showed low damping (αapp=0.006) that is thickness independent. 40nm Co80Fe20 with no boron content exhibited a value twice higher (αapp=0.013) . Crystallization in Co72Fe18B10 , triggered by annealing at 280°C , results in increased magnetization as well as a strong increase in damping, by a factor of 5 for 40nm films. For lower thicknesses the damping increase upon annealing is less pronounced. The exchange stiffness constant for amorphous films is deduced from perpendicular standing spin waves to be 28.4×10−12J∕m . The annealing dependence of damping should have consequences for the spin-transfer switching in CoFeB∕MgO∕CoFeB magnetic tunnel junctions.