Single-crystal SrTiO₃ (STO) is an ultrahigh-κ insulator with an expected low interface trap density that promises high breakdown strength and has great potential to boost the reliability of two-dimensional (2D) field-effect transistors (FETs). Here we provide a detailed study of the performance, stability, and reliability of MoS₂ FETs with STO gate insulators. Most importantly, we observe a small hysteresis for electric fields up to 8 MV cm^-1 at a sweep rate range spanning 0.01-1 V s^-1 and sweep times of kiloseconds. Interestingly, the hysteresis is counterclockwise and bias temperature instability (BTI) is often anomalous, both likely caused by the diffusion of oxygen vacancies. We also show that the hysteresis dynamics in MoS₂/STO FETs are reproducible over a long time, which underlines their high reliability. Our findings show that STO is a promising gate insulator that might help overcome critical obstacles to highly reliable 2D nanoelectronics.

In this article, Dual Trench Split-Control-Gate MOSFET (DT-SCG-MOSFET) based hydrogen gas sensor considering catalytic palladium metal gate approach is simulated using SILVACO ATLAS TCAD. The inner gate architecture in addition to the outer control gates provides enhanced carrier control. Shift in surface potential, subthreshold current, linear current and threshold voltage are used to investigate the performance of the proposed gas sensor. The contribution of analog metrices like the transconductance and parasitic capacitances are explored thoroughly. Sensitivity as a function of subthreshold current as well as change in threshold voltage for the presence and absence of hydrogen gas molecules have been discussed. Results exhibit the superiority of the proposed gas sensor compared with the reported models in terms of sensitivity and Ion/Ioff ratio and suitable for hydrogen gas detection.

In this letter, an attempt for rapid detection of biomarkers for SARs-CoV-2 virus is initiated for the first time, employing MoS ₂₌ based dual-gate mosfet with embedded nanogap in the gate dielectric. Based on the spike, envelope, and DNA proteins of the virus, a deep analysis of the device performance in terms of transfer characteristics I _on /I _off ratio is performed using SILVACO ATLAS TCAD by considering the dielectric constant equivalent of the virus proteins as κ = 4,10,12 and with variation of DNA charge densities as −2 × 10 ¹² Ccm ⁻² to +2 × 10 ¹² Ccm ⁻² . The threshold voltage (V _th ) is eventually extracted and is used as the detection metric to evaluate the sensing ability of the device exhibiting superior V _th sensitivity as high as 100 mV as compared to some of the existing models. Results also reveal a high dependency of the sensitivity on the bioelement configuration within the nanogap and the channel material.

This article investigates the impact of trap related non-idealities on the sensing characteristics of Indium Arsenide/Silicon (InAs/Si) heterojuncture tunnel field-effect transistor (TFET) with dual metal stacked dielectric. Presence of straddling band alignment improves the tunneling probability across InAs/Si junction of the present device thereby boosting its sensing ability. Two cavities carved in the gate dielectric across the source side act as the sensing site for the detection of biomolecules. These biomolecules are immobilized within the implanted cavity to induce the drain current. Extensive simulation is carried out using Silvaco ATLAS device simulator activating trap assisted tunneling model to capture the realistic environment of biosensor in contrast to ideal condition for better reliability analysis. The study shows that trap assisted tunneling effectively modulates the important sensitivity metrics of the biosensor including ON current sensitivity, sub-threshold sensitivity with significant impact on I_d-V_GS characteristics, subthreshold slope profiles and Ion/Ioff ratio and hence cannot be neglected for accurate estimation of sensitivity for real time applications.