Filippo Giubileo

Dr. Filippo Giubileo

CNR-SPIN
orcid
Research Director at National Research Council (CNR), SPIN I...

Research Focus & Metrics

Academic Career Length

27Years (2000-Present)

(Calculated once Scilit publication data is synced: current year − year of first publication + 1)

Representative Publications

View All Publications
9 October 2001 in Physical Review Letters
Verified
Journal Article
Closed access
PDF file
Filippo GiubileoFilippo Giubileo
Filippo Giubileo
DRD. Roditchev
D. Roditchev
WSW. Sacks
W. Sacks
RLR. Lamy
R. Lamy
DTD. X. Thanh
D. X. Thanh
PMPh. Monod
Ph. Monod
We report on the temperature dependence of the quasiparticle density of states in the simple binary compound MgB2 directly measured using scanning tunneling microscope (STM). To achieve high quality tunneling conditions, a small crystal of MgB2 is used as a tip in the STM experiment. The “sample” is chosen to be a 2H- NbSe2 single crystal presenting an atomically flat surface. At low temperature the tunneling conductance spectra show a gap at the Fermi energy followed by two well-pronounced conductance peaks on each side. They appear at voltages VS≃±3.8mV and VL≃±7.8mV. With rising temperature both peaks disappear at the TC of the bulk MgB2, a behavior consistent with the model of two-gap superconductivity. The possibility of a particular proximity effect is also discussed.

23 October 2017 in 2D Materials
Verified
Journal Article
Closed access
PDF file
Antonio Di BartolomeoAntonio Di Bartolomeo
Antonio Di Bartolomeo
LGLuca Genovese
Luca Genovese
Filippo GiubileoFilippo Giubileo
Filippo Giubileo
LILaura Iemmo
Laura Iemmo
GLGiuseppe Luongo
Giuseppe Luongo
MSMarika Schleberger
Marika Schleberger
We investigate the origin of the hysteresis observed in the transfer characteristics of back-gated field-effect transistors with an exfoliated MoS 2 channel. We find that the hysteresis is strongly enhanced by increasing either gate voltage, pressure, temperature or light intensity. Our measurements reveal a step-like behavior of the hysteresis around room temperature, which we explain as water-facilitated charge trapping at the MoS 2 /SiO 2 interface. We conclude that intrinsic defects in MoS 2 , such as S vacancies, which result in effective positive charge trapping, play an important role, besides H 2 O and O 2 adsorbates on the unpassivated device surface. We show that the bistability associated to the hysteresis can be exploited in memory devices.

1 August 2017 in Progress in Surface Science
Verified
Journal Article
Closed access
Filippo GiubileoFilippo Giubileo
Filippo Giubileo
Antonio Di BartolomeoAntonio Di Bartolomeo
Antonio Di Bartolomeo

4 May 2017 in Nanotechnology
Verified
Journal Article
Closed access
PDF file
Antonio Di BartolomeoAntonio Di Bartolomeo
Antonio Di Bartolomeo
LGLuca Genovese
Luca Genovese
TFTobias Foller
Tobias Foller
Filippo GiubileoFilippo Giubileo
Filippo Giubileo
GLGiuseppe Luongo
Giuseppe Luongo
MSMarika Schleberger
Marika Schleberger
We study electrical transport properties in exfoliated molybdenum disulfide (MoS 2 ) back-gated field effect transistors at low drain bias and under different illumination intensities. It is found that photoconductive and photogating effect as well as space charge limited conduction can simultaneously occur. We point out that the photoconductivity increases logarithmically with the light intensity and can persist with a decay time longer than 10 4 s, due to photo-charge trapping at the MoS 2 /SiO 2 interface and in MoS 2 defects. The transfer characteristics present hysteresis that is enhanced by illumination. At low drain bias, the devices feature low contact resistance of 1.4 k Ω μ m − 1 , ON current as high as 1.25 nA μ m − 1 , 10 5 ON–OFF ratio, mobility of ∼1 cm 2 V −1 s −1 and photoresponsivity ℛ ≈ 1 A W − 1 .

21 May 2018 in Advanced Functional Materials
Verified
Journal Article
Closed access
PDF file
Antonio Di BartolomeoAntonio Di Bartolomeo
Antonio Di Bartolomeo
AGAlessandro Grillo
Alessandro Grillo
Francesca UrbanFrancesca Urban
Francesca Urban
LILaura Iemmo
Laura Iemmo
Filippo GiubileoFilippo Giubileo
Filippo Giubileo
LALay-Kee Ang
Lay-Kee Ang

29 March 2018 in Applied Sciences
Verified
Journal Article
Open access
PDF file
Filippo GiubileoFilippo Giubileo
Filippo Giubileo
Antonio Di BartolomeoAntonio Di Bartolomeo
Antonio Di Bartolomeo
LILaura Iemmo
Laura Iemmo
GLGiuseppe Luongo
Giuseppe Luongo
Francesca UrbanFrancesca Urban
Francesca Urban
Field emission electron sources in vacuum electronics are largely considered to achieve faster response, higher efficiency and lower energy consumption in comparison with conventional thermionic emitters. Carbon nanotubes had a leading role in renewing attention to field emission technologies in the early 1990s, due to their exceptional electron emitting properties enabled by their large aspect ratio, high electrical conductivity, and thermal and chemical stability. In the last decade, the search for improved emitters has been extended to several carbon nanostructures, comprising carbon nanotubes, either individual or films, diamond structures, graphitic materials, graphene, etc. Here, we review the main results in the development of carbon-based field emitters.